Strain tunable quantum dot based non-classical photon sources

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OriginalspracheEnglisch
Aufsatznummer011901
FachzeitschriftJournal of Semiconductors
Jahrgang41
Ausgabenummer1
PublikationsstatusVeröffentlicht - Jan. 2020

Abstract

Semiconductor quantum dots are leading candidates for the on-demand generation of single photons and entangled photon pairs. High photon quality and indistinguishability of photons from different sources are critical for quantum information applications. The inability to grow perfectly identical quantum dots with ideal optical properties necessitates the application of post-growth tuning techniques via e.g. temperature, electric, magnetic or strain fields. In this review, we summarize the state-of-the-art and highlight the advantages of strain tunable non-classical photon sources based on epitaxial quantum dots. Using piezoelectric crystals like PMN-PT, the wavelength of single photons and entangled photon pairs emitted by InGaAs/GaAs quantum dots can be tuned reversibly. Combining with quantum light-emitting diodes simultaneously allows for electrical triggering and the tuning of wavelength or exciton fine structure. Emission from light hole exciton can be tuned, and quantum dot containing nanostructure such as nanowires have been piezo-integrated. To ensure the indistinguishability of photons from distant emitters, the wavelength drift caused by piezo creep can be compensated by frequency feedback, which is verified by two-photon interference with photons from two stabilized sources. Therefore, strain tuning proves to be a flexible and reliable tool for the development of scalable quantum dots-based non-classical photon sources.

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Strain tunable quantum dot based non-classical photon sources. / Yang, Jingzhong; Zopf, Michael; Ding, Fei.
in: Journal of Semiconductors, Jahrgang 41, Nr. 1, 011901, 01.2020.

Publikation: Beitrag in FachzeitschriftArtikelForschung

Yang, J., Zopf, M., & Ding, F. (2020). Strain tunable quantum dot based non-classical photon sources. Journal of Semiconductors, 41(1), Artikel 011901. https://doi.org/10.1088/1674-4926/41/1/011901
Yang J, Zopf M, Ding F. Strain tunable quantum dot based non-classical photon sources. Journal of Semiconductors. 2020 Jan;41(1):011901. doi: 10.1088/1674-4926/41/1/011901
Yang, Jingzhong ; Zopf, Michael ; Ding, Fei. / Strain tunable quantum dot based non-classical photon sources. in: Journal of Semiconductors. 2020 ; Jahrgang 41, Nr. 1.
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@article{c0c1f5d9b9104285b161d71452c8b156,
title = "Strain tunable quantum dot based non-classical photon sources",
abstract = "Semiconductor quantum dots are leading candidates for the on-demand generation of single photons and entangled photon pairs. High photon quality and indistinguishability of photons from different sources are critical for quantum information applications. The inability to grow perfectly identical quantum dots with ideal optical properties necessitates the application of post-growth tuning techniques via e.g. temperature, electric, magnetic or strain fields. In this review, we summarize the state-of-the-art and highlight the advantages of strain tunable non-classical photon sources based on epitaxial quantum dots. Using piezoelectric crystals like PMN-PT, the wavelength of single photons and entangled photon pairs emitted by InGaAs/GaAs quantum dots can be tuned reversibly. Combining with quantum light-emitting diodes simultaneously allows for electrical triggering and the tuning of wavelength or exciton fine structure. Emission from light hole exciton can be tuned, and quantum dot containing nanostructure such as nanowires have been piezo-integrated. To ensure the indistinguishability of photons from distant emitters, the wavelength drift caused by piezo creep can be compensated by frequency feedback, which is verified by two-photon interference with photons from two stabilized sources. Therefore, strain tuning proves to be a flexible and reliable tool for the development of scalable quantum dots-based non-classical photon sources.",
keywords = "Quantum dot, entangled photons, fine structure splitting, on-chip, piezoelectric crystal, strain tuning",
author = "Jingzhong Yang and Michael Zopf and Fei Ding",
note = "The work was financially supported by the ERC Starting Grant No. 715770 (QD-NOMS) and the National Natural Science Foundation of China (No. 61728501).",
year = "2020",
month = jan,
doi = "10.1088/1674-4926/41/1/011901",
language = "English",
volume = "41",
number = "1",

}

Download

TY - JOUR

T1 - Strain tunable quantum dot based non-classical photon sources

AU - Yang, Jingzhong

AU - Zopf, Michael

AU - Ding, Fei

N1 - The work was financially supported by the ERC Starting Grant No. 715770 (QD-NOMS) and the National Natural Science Foundation of China (No. 61728501).

PY - 2020/1

Y1 - 2020/1

N2 - Semiconductor quantum dots are leading candidates for the on-demand generation of single photons and entangled photon pairs. High photon quality and indistinguishability of photons from different sources are critical for quantum information applications. The inability to grow perfectly identical quantum dots with ideal optical properties necessitates the application of post-growth tuning techniques via e.g. temperature, electric, magnetic or strain fields. In this review, we summarize the state-of-the-art and highlight the advantages of strain tunable non-classical photon sources based on epitaxial quantum dots. Using piezoelectric crystals like PMN-PT, the wavelength of single photons and entangled photon pairs emitted by InGaAs/GaAs quantum dots can be tuned reversibly. Combining with quantum light-emitting diodes simultaneously allows for electrical triggering and the tuning of wavelength or exciton fine structure. Emission from light hole exciton can be tuned, and quantum dot containing nanostructure such as nanowires have been piezo-integrated. To ensure the indistinguishability of photons from distant emitters, the wavelength drift caused by piezo creep can be compensated by frequency feedback, which is verified by two-photon interference with photons from two stabilized sources. Therefore, strain tuning proves to be a flexible and reliable tool for the development of scalable quantum dots-based non-classical photon sources.

AB - Semiconductor quantum dots are leading candidates for the on-demand generation of single photons and entangled photon pairs. High photon quality and indistinguishability of photons from different sources are critical for quantum information applications. The inability to grow perfectly identical quantum dots with ideal optical properties necessitates the application of post-growth tuning techniques via e.g. temperature, electric, magnetic or strain fields. In this review, we summarize the state-of-the-art and highlight the advantages of strain tunable non-classical photon sources based on epitaxial quantum dots. Using piezoelectric crystals like PMN-PT, the wavelength of single photons and entangled photon pairs emitted by InGaAs/GaAs quantum dots can be tuned reversibly. Combining with quantum light-emitting diodes simultaneously allows for electrical triggering and the tuning of wavelength or exciton fine structure. Emission from light hole exciton can be tuned, and quantum dot containing nanostructure such as nanowires have been piezo-integrated. To ensure the indistinguishability of photons from distant emitters, the wavelength drift caused by piezo creep can be compensated by frequency feedback, which is verified by two-photon interference with photons from two stabilized sources. Therefore, strain tuning proves to be a flexible and reliable tool for the development of scalable quantum dots-based non-classical photon sources.

KW - Quantum dot

KW - entangled photons

KW - fine structure splitting

KW - on-chip

KW - piezoelectric crystal

KW - strain tuning

UR - http://www.scopus.com/inward/record.url?scp=85082802900&partnerID=8YFLogxK

U2 - 10.1088/1674-4926/41/1/011901

DO - 10.1088/1674-4926/41/1/011901

M3 - Article

VL - 41

JO - Journal of Semiconductors

JF - Journal of Semiconductors

SN - 1674-4926

IS - 1

M1 - 011901

ER -

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