Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 254-258 |
| Seitenumfang | 5 |
| Fachzeitschrift | Journal of crystal growth |
| Jahrgang | 378 |
| Frühes Online-Datum | 3 Jan. 2013 |
| Publikationsstatus | Veröffentlicht - 1 Sept. 2013 |
Abstract
Strain relaxation of thin Ge layers grown by carbon-mediated epitaxy at 50 °C on Si(001) was investigated for a multi-step growth procedure. Additionally, the impact of the post-growth annealing temperature on the strain relaxation obtained for a single carbon-mediated growth step was analyzed. The degree of relaxation was monitored in situ by reflection high energy electron diffraction and ex situ by high-resolution x-ray diffraction and transmission electron microscopy. For multi-step growth, relaxation occurs mainly during the first cycle (growth and annealing). Full relaxation is already achieved after 3-4 cycles. The relaxation process during a single growth cycle can be divided into three sections: annealing up to 200 °C is sufficient to trigger most of the strain relaxation. After annealing up to 450 °C, the film lattice parameter already equals the Ge bulk value, though the layer shows a rough surface. Only an annealing step up to 650 °C results in a smooth surface and interface. Smooth and fully relaxed Ge films of only 26 nm thicknesses were obtained by carbon-mediated growth.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Chemie (insg.)
- Anorganische Chemie
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Journal of crystal growth, Jahrgang 378, 01.09.2013, S. 254-258.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy
AU - Tetzlaff, D.
AU - Wietler, T. F.
AU - Bugiel, E.
AU - Osten, H. J.
PY - 2013/9/1
Y1 - 2013/9/1
N2 - Strain relaxation of thin Ge layers grown by carbon-mediated epitaxy at 50 °C on Si(001) was investigated for a multi-step growth procedure. Additionally, the impact of the post-growth annealing temperature on the strain relaxation obtained for a single carbon-mediated growth step was analyzed. The degree of relaxation was monitored in situ by reflection high energy electron diffraction and ex situ by high-resolution x-ray diffraction and transmission electron microscopy. For multi-step growth, relaxation occurs mainly during the first cycle (growth and annealing). Full relaxation is already achieved after 3-4 cycles. The relaxation process during a single growth cycle can be divided into three sections: annealing up to 200 °C is sufficient to trigger most of the strain relaxation. After annealing up to 450 °C, the film lattice parameter already equals the Ge bulk value, though the layer shows a rough surface. Only an annealing step up to 650 °C results in a smooth surface and interface. Smooth and fully relaxed Ge films of only 26 nm thicknesses were obtained by carbon-mediated growth.
AB - Strain relaxation of thin Ge layers grown by carbon-mediated epitaxy at 50 °C on Si(001) was investigated for a multi-step growth procedure. Additionally, the impact of the post-growth annealing temperature on the strain relaxation obtained for a single carbon-mediated growth step was analyzed. The degree of relaxation was monitored in situ by reflection high energy electron diffraction and ex situ by high-resolution x-ray diffraction and transmission electron microscopy. For multi-step growth, relaxation occurs mainly during the first cycle (growth and annealing). Full relaxation is already achieved after 3-4 cycles. The relaxation process during a single growth cycle can be divided into three sections: annealing up to 200 °C is sufficient to trigger most of the strain relaxation. After annealing up to 450 °C, the film lattice parameter already equals the Ge bulk value, though the layer shows a rough surface. Only an annealing step up to 650 °C results in a smooth surface and interface. Smooth and fully relaxed Ge films of only 26 nm thicknesses were obtained by carbon-mediated growth.
KW - Characterization
KW - Diffraction
KW - Molecular beam epitaxy
KW - Reflection high energy electron
KW - Semiconducting germanium
KW - Stresses
UR - http://www.scopus.com/inward/record.url?scp=84885429716&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2012.12.087
DO - 10.1016/j.jcrysgro.2012.12.087
M3 - Article
AN - SCOPUS:84885429716
VL - 378
SP - 254
EP - 258
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
ER -