Storage ring free-electron lasing at 176 nm-dielectric mirror development for vacuum ultraviolet free-electron lasers

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autorschaft

  • Stefan Günster
  • Detlev Ristau
  • Alexandre Gatto
  • Norbert Kaiser
  • Mauro Trovó
  • Miltcho Danailov

Externe Organisationen

  • Laser Zentrum Hannover e.V. (LZH)
  • Fraunhofer-Institut für Angewandte Optik und Feinmechanik IOF
  • Sincrotrone Trieste
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)5866-5870
Seitenumfang5
FachzeitschriftApplied Optics
Jahrgang45
Ausgabenummer23
PublikationsstatusVeröffentlicht - 10 Aug. 2006
Extern publiziertJa

Abstract

Mirrors for storage ring free-electron lasers in the vacuum ultraviolet must provide adequate reflectivity and resistance against synchrotron radiation. The free-electron laser system at ELETTRA (Trieste, Italy) is targeted to lase in the spectral range between 155 and 200 nm. It was demonstrated that dense oxide multilayer coatings allow lasing down to 189.9 nm. However, pure oxide systems show significant absorption at lower wavelengths and cannot be employed below 189.9 nm. Fluoride stacks can be deposited down to 130 nm with high reflection values above 95%, but their resistance against the harsh synchrotron environment is poor. They rapidly degrade; lasing cannot be realized with this mirror approach. For the range between 170 and 190 nm, hybrid systems-combining fluoride and oxide materials-have been manufactured. With appropriate deposition procedures, mirrors achieve reflectance values up to 99% and an adequate radiation resistance simultaneously. A mirror based on a conventional fluoride stack protected by a dense silicon dioxide protection layer was deposited and successfully employed for free-electron lasing at 176.4 nm.

ASJC Scopus Sachgebiete

Zitieren

Storage ring free-electron lasing at 176 nm-dielectric mirror development for vacuum ultraviolet free-electron lasers. / Günster, Stefan; Ristau, Detlev; Gatto, Alexandre et al.
in: Applied Optics, Jahrgang 45, Nr. 23, 10.08.2006, S. 5866-5870.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Günster S, Ristau D, Gatto A, Kaiser N, Trovó M, Danailov M. Storage ring free-electron lasing at 176 nm-dielectric mirror development for vacuum ultraviolet free-electron lasers. Applied Optics. 2006 Aug 10;45(23):5866-5870. doi: 10.1364/AO.45.005866
Günster, Stefan ; Ristau, Detlev ; Gatto, Alexandre et al. / Storage ring free-electron lasing at 176 nm-dielectric mirror development for vacuum ultraviolet free-electron lasers. in: Applied Optics. 2006 ; Jahrgang 45, Nr. 23. S. 5866-5870.
Download
@article{7677dbd8d81e4005a32220515f426520,
title = "Storage ring free-electron lasing at 176 nm-dielectric mirror development for vacuum ultraviolet free-electron lasers",
abstract = "Mirrors for storage ring free-electron lasers in the vacuum ultraviolet must provide adequate reflectivity and resistance against synchrotron radiation. The free-electron laser system at ELETTRA (Trieste, Italy) is targeted to lase in the spectral range between 155 and 200 nm. It was demonstrated that dense oxide multilayer coatings allow lasing down to 189.9 nm. However, pure oxide systems show significant absorption at lower wavelengths and cannot be employed below 189.9 nm. Fluoride stacks can be deposited down to 130 nm with high reflection values above 95%, but their resistance against the harsh synchrotron environment is poor. They rapidly degrade; lasing cannot be realized with this mirror approach. For the range between 170 and 190 nm, hybrid systems-combining fluoride and oxide materials-have been manufactured. With appropriate deposition procedures, mirrors achieve reflectance values up to 99% and an adequate radiation resistance simultaneously. A mirror based on a conventional fluoride stack protected by a dense silicon dioxide protection layer was deposited and successfully employed for free-electron lasing at 176.4 nm.",
author = "Stefan G{\"u}nster and Detlev Ristau and Alexandre Gatto and Norbert Kaiser and Mauro Trov{\'o} and Miltcho Danailov",
year = "2006",
month = aug,
day = "10",
doi = "10.1364/AO.45.005866",
language = "English",
volume = "45",
pages = "5866--5870",
journal = "Applied Optics",
issn = "1559-128X",
publisher = "OSA - The Optical Society",
number = "23",

}

Download

TY - JOUR

T1 - Storage ring free-electron lasing at 176 nm-dielectric mirror development for vacuum ultraviolet free-electron lasers

AU - Günster, Stefan

AU - Ristau, Detlev

AU - Gatto, Alexandre

AU - Kaiser, Norbert

AU - Trovó, Mauro

AU - Danailov, Miltcho

PY - 2006/8/10

Y1 - 2006/8/10

N2 - Mirrors for storage ring free-electron lasers in the vacuum ultraviolet must provide adequate reflectivity and resistance against synchrotron radiation. The free-electron laser system at ELETTRA (Trieste, Italy) is targeted to lase in the spectral range between 155 and 200 nm. It was demonstrated that dense oxide multilayer coatings allow lasing down to 189.9 nm. However, pure oxide systems show significant absorption at lower wavelengths and cannot be employed below 189.9 nm. Fluoride stacks can be deposited down to 130 nm with high reflection values above 95%, but their resistance against the harsh synchrotron environment is poor. They rapidly degrade; lasing cannot be realized with this mirror approach. For the range between 170 and 190 nm, hybrid systems-combining fluoride and oxide materials-have been manufactured. With appropriate deposition procedures, mirrors achieve reflectance values up to 99% and an adequate radiation resistance simultaneously. A mirror based on a conventional fluoride stack protected by a dense silicon dioxide protection layer was deposited and successfully employed for free-electron lasing at 176.4 nm.

AB - Mirrors for storage ring free-electron lasers in the vacuum ultraviolet must provide adequate reflectivity and resistance against synchrotron radiation. The free-electron laser system at ELETTRA (Trieste, Italy) is targeted to lase in the spectral range between 155 and 200 nm. It was demonstrated that dense oxide multilayer coatings allow lasing down to 189.9 nm. However, pure oxide systems show significant absorption at lower wavelengths and cannot be employed below 189.9 nm. Fluoride stacks can be deposited down to 130 nm with high reflection values above 95%, but their resistance against the harsh synchrotron environment is poor. They rapidly degrade; lasing cannot be realized with this mirror approach. For the range between 170 and 190 nm, hybrid systems-combining fluoride and oxide materials-have been manufactured. With appropriate deposition procedures, mirrors achieve reflectance values up to 99% and an adequate radiation resistance simultaneously. A mirror based on a conventional fluoride stack protected by a dense silicon dioxide protection layer was deposited and successfully employed for free-electron lasing at 176.4 nm.

UR - http://www.scopus.com/inward/record.url?scp=33749856630&partnerID=8YFLogxK

U2 - 10.1364/AO.45.005866

DO - 10.1364/AO.45.005866

M3 - Article

AN - SCOPUS:33749856630

VL - 45

SP - 5866

EP - 5870

JO - Applied Optics

JF - Applied Optics

SN - 1559-128X

IS - 23

ER -