Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 568-571 |
| Seitenumfang | 4 |
| Fachzeitschrift | JETP letters |
| Jahrgang | 76 |
| Ausgabenummer | 9 |
| Publikationsstatus | Veröffentlicht - 10 Nov. 2002 |
Abstract
Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide with two metallic terminals, we derive simple conditions for a steplike voltage-current curve. Due to standard chemical properties, doping phosphorus atoms located in a certain domain of the dot form geometrically parallel current channels. The height of the current step typically equals (1.2 pA)N, where N = 0, 1, 2, 3... is the number of doping atoms inside the domain, and only negligibly depends on the actual position of the dopants. The found conditions are feasible in experimentally available structures.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: JETP letters, Jahrgang 76, Nr. 9, 10.11.2002, S. 568-571.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Steps on current-voltage characteristics of a silicon quantum dot covered by natural oxide
AU - Vyshenski, S. V.
AU - Zeitler, U.
AU - Haug, R. J.
PY - 2002/11/10
Y1 - 2002/11/10
N2 - Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide with two metallic terminals, we derive simple conditions for a steplike voltage-current curve. Due to standard chemical properties, doping phosphorus atoms located in a certain domain of the dot form geometrically parallel current channels. The height of the current step typically equals (1.2 pA)N, where N = 0, 1, 2, 3... is the number of doping atoms inside the domain, and only negligibly depends on the actual position of the dopants. The found conditions are feasible in experimentally available structures.
AB - Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide with two metallic terminals, we derive simple conditions for a steplike voltage-current curve. Due to standard chemical properties, doping phosphorus atoms located in a certain domain of the dot form geometrically parallel current channels. The height of the current step typically equals (1.2 pA)N, where N = 0, 1, 2, 3... is the number of doping atoms inside the domain, and only negligibly depends on the actual position of the dopants. The found conditions are feasible in experimentally available structures.
UR - http://www.scopus.com/inward/record.url?scp=0038891576&partnerID=8YFLogxK
U2 - 10.1134/1.1538291
DO - 10.1134/1.1538291
M3 - Article
AN - SCOPUS:0038891576
VL - 76
SP - 568
EP - 571
JO - JETP letters
JF - JETP letters
SN - 0021-3640
IS - 9
ER -