Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • M. Czernohorsky
  • D. Tetzlaff
  • E. Bugiel
  • R. Dargis
  • H. J. Osten
  • H. D.B. Gottlob
  • M. Schmidt
  • M. C. Lemme
  • H. Kurz

Organisationseinheiten

Externe Organisationen

  • AMO GmbH
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Aufsatznummer035010
FachzeitschriftSemiconductor Science and Technology
Jahrgang23
Ausgabenummer3
PublikationsstatusVeröffentlicht - März 2008

Abstract

We investigate the impact of rapid thermal anneals on structural and electrical properties of crystalline Gd2O3 layers grown on Si with different orientations. Due to additional oxygen from the annealing ambient, a structureless two-layer stack (silicon-oxide-like and silicate-like) between the silicon and the crystalline oxide will be formed. The degradation of layers can be significantly reduced by sealing the layer with a-Si prior to annealing. For the capped layers, the effective capacitance equivalent thickness increases only slightly even after a 1000 °C anneal.

ASJC Scopus Sachgebiete

Zitieren

Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing. / Czernohorsky, M.; Tetzlaff, D.; Bugiel, E. et al.
in: Semiconductor Science and Technology, Jahrgang 23, Nr. 3, 035010, 03.2008.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Czernohorsky, M, Tetzlaff, D, Bugiel, E, Dargis, R, Osten, HJ, Gottlob, HDB, Schmidt, M, Lemme, MC & Kurz, H 2008, 'Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing', Semiconductor Science and Technology, Jg. 23, Nr. 3, 035010. https://doi.org/10.1088/0268-1242/23/3/035010
Czernohorsky, M., Tetzlaff, D., Bugiel, E., Dargis, R., Osten, H. J., Gottlob, H. D. B., Schmidt, M., Lemme, M. C., & Kurz, H. (2008). Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing. Semiconductor Science and Technology, 23(3), Artikel 035010. https://doi.org/10.1088/0268-1242/23/3/035010
Czernohorsky M, Tetzlaff D, Bugiel E, Dargis R, Osten HJ, Gottlob HDB et al. Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing. Semiconductor Science and Technology. 2008 Mär;23(3):035010. doi: 10.1088/0268-1242/23/3/035010
Czernohorsky, M. ; Tetzlaff, D. ; Bugiel, E. et al. / Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing. in: Semiconductor Science and Technology. 2008 ; Jahrgang 23, Nr. 3.
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abstract = "We investigate the impact of rapid thermal anneals on structural and electrical properties of crystalline Gd2O3 layers grown on Si with different orientations. Due to additional oxygen from the annealing ambient, a structureless two-layer stack (silicon-oxide-like and silicate-like) between the silicon and the crystalline oxide will be formed. The degradation of layers can be significantly reduced by sealing the layer with a-Si prior to annealing. For the capped layers, the effective capacitance equivalent thickness increases only slightly even after a 1000 °C anneal.",
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T1 - Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing

AU - Czernohorsky, M.

AU - Tetzlaff, D.

AU - Bugiel, E.

AU - Dargis, R.

AU - Osten, H. J.

AU - Gottlob, H. D.B.

AU - Schmidt, M.

AU - Lemme, M. C.

AU - Kurz, H.

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N2 - We investigate the impact of rapid thermal anneals on structural and electrical properties of crystalline Gd2O3 layers grown on Si with different orientations. Due to additional oxygen from the annealing ambient, a structureless two-layer stack (silicon-oxide-like and silicate-like) between the silicon and the crystalline oxide will be formed. The degradation of layers can be significantly reduced by sealing the layer with a-Si prior to annealing. For the capped layers, the effective capacitance equivalent thickness increases only slightly even after a 1000 °C anneal.

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