Stability of crystalline Gd2O3 thin films on silicon during post-growth processing

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autoren

  • D. Schwendt
  • D. Tetzlaff
  • E. Bugiel
  • H. J. Osten
  • H. D.B. Gottlob

Organisationseinheiten

Externe Organisationen

  • AMO GmbH
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des Sammelwerks3rd International Conference on Signals, Circuits and Systems, SCS 2009
PublikationsstatusVeröffentlicht - 2009
Veranstaltung3rd International Conference on Signals, Circuits and Systems, SCS 2009 - Medenine, Tunesien
Dauer: 6 Nov. 2009 → 8 Nov. 2009

Publikationsreihe

Name3rd International Conference on Signals, Circuits and Systems, SCS 2009

Abstract

Experimental results for crystalline Gd2O3-based MOS capacitors show that these layers are excellent candidates for application as very thin high-K materials replacing SiO2 in future MOS devices. First electrical characteristics of n- and ptype SOI-MOSFETs with epitaxial Gd2O3 demonstrate the general feasibility of this novel gate insulator, but thermal stability during typical CMOS annealing processes has been identified as a key issue. Here, we investigate the effect of postgrowth annealing on layer properties. Standard forming gas anneal can eliminate flatband instabilities and hysteresis as well as reduce leakage currents by saturating dangling bond caused by the bonding mismatch. In addition, we investigated the impact of rapid thermal anneals on structural and electrical properties of crystalline Gd2O3 layers grown on Si. Finally, we will show a new way to improve the thermal stability of those crystalline layers significantly.

ASJC Scopus Sachgebiete

Zitieren

Stability of crystalline Gd2O3 thin films on silicon during post-growth processing. / Schwendt, D.; Tetzlaff, D.; Bugiel, E. et al.
3rd International Conference on Signals, Circuits and Systems, SCS 2009. 2009. 5414206 (3rd International Conference on Signals, Circuits and Systems, SCS 2009).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Schwendt, D, Tetzlaff, D, Bugiel, E, Osten, HJ & Gottlob, HDB 2009, Stability of crystalline Gd2O3 thin films on silicon during post-growth processing. in 3rd International Conference on Signals, Circuits and Systems, SCS 2009., 5414206, 3rd International Conference on Signals, Circuits and Systems, SCS 2009, 3rd International Conference on Signals, Circuits and Systems, SCS 2009, Medenine, Tunesien, 6 Nov. 2009. https://doi.org/10.1109/ICSCS.2009.5414206
Schwendt, D., Tetzlaff, D., Bugiel, E., Osten, H. J., & Gottlob, H. D. B. (2009). Stability of crystalline Gd2O3 thin films on silicon during post-growth processing. In 3rd International Conference on Signals, Circuits and Systems, SCS 2009 Artikel 5414206 (3rd International Conference on Signals, Circuits and Systems, SCS 2009). https://doi.org/10.1109/ICSCS.2009.5414206
Schwendt D, Tetzlaff D, Bugiel E, Osten HJ, Gottlob HDB. Stability of crystalline Gd2O3 thin films on silicon during post-growth processing. in 3rd International Conference on Signals, Circuits and Systems, SCS 2009. 2009. 5414206. (3rd International Conference on Signals, Circuits and Systems, SCS 2009). doi: 10.1109/ICSCS.2009.5414206
Schwendt, D. ; Tetzlaff, D. ; Bugiel, E. et al. / Stability of crystalline Gd2O3 thin films on silicon during post-growth processing. 3rd International Conference on Signals, Circuits and Systems, SCS 2009. 2009. (3rd International Conference on Signals, Circuits and Systems, SCS 2009).
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AU - Schwendt, D.

AU - Tetzlaff, D.

AU - Bugiel, E.

AU - Osten, H. J.

AU - Gottlob, H. D.B.

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KW - Gadolinium oxide

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KW - High-k dielectrics

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