Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 152-157 |
| Seitenumfang | 6 |
| Fachzeitschrift | THIN SOLID FILMS |
| Jahrgang | 337 |
| Ausgabenummer | 1-2 |
| Publikationsstatus | Veröffentlicht - 11 Jan. 1999 |
| Extern publiziert | Ja |
Abstract
The crystallization evolution of boron and phosphorus doped amorphous Si1-xGex films (5 × 1017 -5 × 1020 cm-3), deposited on SiO2/ Si(001) substrates by molecular beam in high vacuum at room temperature, were studied by XRD, TEM and SEM. The amorphous Si1-xGex films were fully crystallized at ∼600°C. Up to 800°C no morphology changes were observed. Between 800 and 950°C, voids and hillocks were gradually developed in the films, which consequently collapsed. The Hall concentration and mobility were characterized in the Si1-xGex films, annealed between 600 and 800°C. The mobility and conductivity of p-Si0.5Ge0.5 films at room temperature were found to be relative high: 60 cm2/V s and 2000 (Ω cm)-1, respectively.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Oberflächen und Grenzflächen
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Werkstoffwissenschaften (insg.)
- Metalle und Legierungen
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: THIN SOLID FILMS, Jahrgang 337, Nr. 1-2, 11.01.1999, S. 152-157.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Stability and transport properties of microcrystalline Si1-xGex films
AU - Edelman, F.
AU - Raz, T.
AU - Komem, Y.
AU - Stölzer, M.
AU - Werner, P.
AU - Zaumseil, P.
AU - Osten, H. J.
AU - Griesche, J.
AU - Capitan, M.
PY - 1999/1/11
Y1 - 1999/1/11
N2 - The crystallization evolution of boron and phosphorus doped amorphous Si1-xGex films (5 × 1017 -5 × 1020 cm-3), deposited on SiO2/ Si(001) substrates by molecular beam in high vacuum at room temperature, were studied by XRD, TEM and SEM. The amorphous Si1-xGex films were fully crystallized at ∼600°C. Up to 800°C no morphology changes were observed. Between 800 and 950°C, voids and hillocks were gradually developed in the films, which consequently collapsed. The Hall concentration and mobility were characterized in the Si1-xGex films, annealed between 600 and 800°C. The mobility and conductivity of p-Si0.5Ge0.5 films at room temperature were found to be relative high: 60 cm2/V s and 2000 (Ω cm)-1, respectively.
AB - The crystallization evolution of boron and phosphorus doped amorphous Si1-xGex films (5 × 1017 -5 × 1020 cm-3), deposited on SiO2/ Si(001) substrates by molecular beam in high vacuum at room temperature, were studied by XRD, TEM and SEM. The amorphous Si1-xGex films were fully crystallized at ∼600°C. Up to 800°C no morphology changes were observed. Between 800 and 950°C, voids and hillocks were gradually developed in the films, which consequently collapsed. The Hall concentration and mobility were characterized in the Si1-xGex films, annealed between 600 and 800°C. The mobility and conductivity of p-Si0.5Ge0.5 films at room temperature were found to be relative high: 60 cm2/V s and 2000 (Ω cm)-1, respectively.
KW - Crystallization
KW - Electron transport
KW - Hillocks
KW - Silicon-germanium films
KW - X-ray diffraction
UR - http://www.scopus.com/inward/record.url?scp=0000334181&partnerID=8YFLogxK
U2 - 10.1016/S0040-6090(98)01378-9
DO - 10.1016/S0040-6090(98)01378-9
M3 - Article
AN - SCOPUS:0000334181
VL - 337
SP - 152
EP - 157
JO - THIN SOLID FILMS
JF - THIN SOLID FILMS
SN - 0040-6090
IS - 1-2
ER -