Details
| Originalsprache | Englisch |
|---|---|
| Veröffentlichungsnummer (amtliches Aktenzeichen) | CN1717747 |
| IPC | H01L 27/ 11 A I |
| Prioritätsdatum | 26 Nov. 2002 |
| Publikationsstatus | Veröffentlicht - 4 Jan. 2006 |
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SRAM memory cell and method for compensating a leakage current for it. / Martelloni, Yannick (Erfinder*in); Nirschl, Thomas (Erfinder*in); Wicht, Bernhard (Erfinder*in).
Patent Nr.: CN1717747. Jan. 04, 2006.
Patent Nr.: CN1717747. Jan. 04, 2006.
Publikation: Schutzrecht/Patent › Patent
Martelloni, Y, Nirschl, T & Wicht, B Jan.. 04 2006, SRAM memory cell and method for compensating a leakage current for it, Patent Nr. CN1717747.
Martelloni, Y., Nirschl, T., & Wicht, B. (2006). SRAM memory cell and method for compensating a leakage current for it. (Patent Nr. CN1717747).
Martelloni Y, Nirschl T, Wicht B, Erfinder/-innen. SRAM memory cell and method for compensating a leakage current for it. CN1717747. 2006 Jan 4.
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title = "SRAM memory cell and method for compensating a leakage current for it",
author = "Yannick Martelloni and Thomas Nirschl and Bernhard Wicht",
year = "2006",
month = jan,
day = "4",
language = "English",
type = "Patent",
note = "CN1717747; H01L 27/ 11 A I",
}
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TY - PAT
T1 - SRAM memory cell and method for compensating a leakage current for it
AU - Martelloni, Yannick
AU - Nirschl, Thomas
AU - Wicht, Bernhard
PY - 2006/1/4
Y1 - 2006/1/4
M3 - Patent
M1 - CN1717747
ER -