Spin-reversed quasielectron excitations in the -filling fractional-quantum-Hall-effect state

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Externe Organisationen

  • RAS - Institute of Solid State Physics
  • Max-Planck-Institut für Festkörperforschung
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Details

OriginalspracheEnglisch
Seiten (von - bis)4089-4092
Seitenumfang4
FachzeitschriftPhysical Review B - Condensed Matter and Materials Physics
Jahrgang55
Ausgabenummer7
PublikationsstatusVeröffentlicht - 1 Jan. 1997
Extern publiziertJa

Abstract

We report on the effect of an in-plane magnetic field component on the magnetoresistance of the two-dimensional electron system (2DES) and capacitance between the 2DES and gate. The appearance of the ν=1/3 and ν=2/3 fractional-quantum-Hall-effect (FQHE) states has been observed to modify the effect at ν≳2/3. Our results imply the existence of the spin-reversed quasielectron excitations in the ν=2/3 FQHE. Charged excitations with large numbers of reversed spins (skyrmions) recently predicted for the ν=1/3 FQHE state have not been found.

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Spin-reversed quasielectron excitations in the -filling fractional-quantum-Hall-effect state. / Dorozhkin, S.; Dorokhova, M.; Haug, R.
in: Physical Review B - Condensed Matter and Materials Physics, Jahrgang 55, Nr. 7, 01.01.1997, S. 4089-4092.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

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@article{1f4da123d3ed4e899849fb810331b273,
title = "Spin-reversed quasielectron excitations in the -filling fractional-quantum-Hall-effect state",
abstract = "We report on the effect of an in-plane magnetic field component on the magnetoresistance of the two-dimensional electron system (2DES) and capacitance between the 2DES and gate. The appearance of the ν=1/3 and ν=2/3 fractional-quantum-Hall-effect (FQHE) states has been observed to modify the effect at ν≳2/3. Our results imply the existence of the spin-reversed quasielectron excitations in the ν=2/3 FQHE. Charged excitations with large numbers of reversed spins (skyrmions) recently predicted for the ν=1/3 FQHE state have not been found.",
author = "S. Dorozhkin and M. Dorokhova and R. Haug",
year = "1997",
month = jan,
day = "1",
doi = "10.1103/PhysRevB.55.4089",
language = "English",
volume = "55",
pages = "4089--4092",
journal = "Physical Review B - Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "American Institute of Physics",
number = "7",

}

Download

TY - JOUR

T1 - Spin-reversed quasielectron excitations in the -filling fractional-quantum-Hall-effect state

AU - Dorozhkin, S.

AU - Dorokhova, M.

AU - Haug, R.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - We report on the effect of an in-plane magnetic field component on the magnetoresistance of the two-dimensional electron system (2DES) and capacitance between the 2DES and gate. The appearance of the ν=1/3 and ν=2/3 fractional-quantum-Hall-effect (FQHE) states has been observed to modify the effect at ν≳2/3. Our results imply the existence of the spin-reversed quasielectron excitations in the ν=2/3 FQHE. Charged excitations with large numbers of reversed spins (skyrmions) recently predicted for the ν=1/3 FQHE state have not been found.

AB - We report on the effect of an in-plane magnetic field component on the magnetoresistance of the two-dimensional electron system (2DES) and capacitance between the 2DES and gate. The appearance of the ν=1/3 and ν=2/3 fractional-quantum-Hall-effect (FQHE) states has been observed to modify the effect at ν≳2/3. Our results imply the existence of the spin-reversed quasielectron excitations in the ν=2/3 FQHE. Charged excitations with large numbers of reversed spins (skyrmions) recently predicted for the ν=1/3 FQHE state have not been found.

UR - http://www.scopus.com/inward/record.url?scp=0011712145&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.55.4089

DO - 10.1103/PhysRevB.55.4089

M3 - Article

AN - SCOPUS:0011712145

VL - 55

SP - 4089

EP - 4092

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

SN - 1098-0121

IS - 7

ER -

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