Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1580-1582 |
| Seitenumfang | 3 |
| Fachzeitschrift | Applied Physics Letters |
| Jahrgang | 73 |
| Ausgabenummer | 11 |
| Publikationsstatus | Veröffentlicht - 8 Sept. 1998 |
| Extern publiziert | Ja |
Abstract
We present a spectroscopic method for studying spin transport in semiconductors. Our time-resolved experiments have an important implication for spin electronics as they show that spin-polarized electron drift is possible in semiconductors over typical device lengths in high electric fields. We demonstrate an almost complete conservation of the orientation of the electron spin during transport in GaAs over a distance as long as 4 μm and fields up to 6 kV/cm.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied Physics Letters, Jahrgang 73, Nr. 11, 08.09.1998, S. 1580-1582.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Spin transport in GaAs
AU - Hägele, D.
AU - Oestreich, Michael
AU - Rühle, W. W.
AU - Nestle, N.
AU - Eberl, K.
PY - 1998/9/8
Y1 - 1998/9/8
N2 - We present a spectroscopic method for studying spin transport in semiconductors. Our time-resolved experiments have an important implication for spin electronics as they show that spin-polarized electron drift is possible in semiconductors over typical device lengths in high electric fields. We demonstrate an almost complete conservation of the orientation of the electron spin during transport in GaAs over a distance as long as 4 μm and fields up to 6 kV/cm.
AB - We present a spectroscopic method for studying spin transport in semiconductors. Our time-resolved experiments have an important implication for spin electronics as they show that spin-polarized electron drift is possible in semiconductors over typical device lengths in high electric fields. We demonstrate an almost complete conservation of the orientation of the electron spin during transport in GaAs over a distance as long as 4 μm and fields up to 6 kV/cm.
UR - http://www.scopus.com/inward/record.url?scp=0000050851&partnerID=8YFLogxK
U2 - 10.1063/1.122210
DO - 10.1063/1.122210
M3 - Article
AN - SCOPUS:0000050851
VL - 73
SP - 1580
EP - 1582
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 11
ER -