Details
| Originalsprache | Englisch |
|---|---|
| Seitenumfang | 1 |
| Publikationsstatus | Veröffentlicht - 2002 |
| Extern publiziert | Ja |
| Veranstaltung | 2002 Quantum Electronics and Laser Science (QELS) - Long Beach, USA / Vereinigte Staaten Dauer: 19 Mai 2002 → 22 Mai 2002 |
Konferenz
| Konferenz | 2002 Quantum Electronics and Laser Science (QELS) |
|---|---|
| Kurztitel | QELS |
| Land/Gebiet | USA / Vereinigte Staaten |
| Ort | Long Beach |
| Zeitraum | 19 Mai 2002 → 22 Mai 2002 |
Abstract
The spin-relaxation of electrons in modulation and homogeneously n-doped quantum wells was studied. Spin-relaxation was measured in dependence of excitation density and temperature at different excitation energies. The resultant data was analyzed in detail.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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2002. Beitrag in 2002 Quantum Electronics and Laser Science (QELS), Long Beach, California, USA / Vereinigte Staaten.
Publikation: Konferenzbeitrag › Paper › Forschung › Peer-Review
}
TY - CONF
T1 - Spin relaxation in n-doped GaAs/AlGaAs quantum wells
AU - Bender, Markus
AU - Oestreich, Michael
AU - Rühle, W. W.
PY - 2002
Y1 - 2002
N2 - The spin-relaxation of electrons in modulation and homogeneously n-doped quantum wells was studied. Spin-relaxation was measured in dependence of excitation density and temperature at different excitation energies. The resultant data was analyzed in detail.
AB - The spin-relaxation of electrons in modulation and homogeneously n-doped quantum wells was studied. Spin-relaxation was measured in dependence of excitation density and temperature at different excitation energies. The resultant data was analyzed in detail.
UR - http://www.scopus.com/inward/record.url?scp=0036361102&partnerID=8YFLogxK
M3 - Paper
T2 - 2002 Quantum Electronics and Laser Science (QELS)
Y2 - 19 May 2002 through 22 May 2002
ER -