TY - JOUR

T1 - Spin quantum beats in semiconductors

AU - Oestreich, Michael

AU - Hallstein, Sascha

AU - Rühle, Wolfgang W.

N1 - Funding information: Manuscript received August 30, 1996; revised January 20, 1997. This work was supported by the Deutsche Forschungsgemeinschaft (Schwer-punktsprogramm Quantenkohärenz in Halbleitern) and performed at the Max-Planck-Institut für Festkörperforschung in Stuttgart. M. Oestreich and W. W. Rühle are with the Fachbereich Physik der Philipps-Universität, D-35032 Marburg, Germany. S. Hallstein is with the Max-Planck-Institut für Festkörperforschung, D-70569 Stuttgart, Germany. Publisher Item Identifier S 1077-260X(96)09595-0.

PY - 1996/9

Y1 - 1996/9

N2 - Spin quantum-beat spectroscopy is presented as a powerful tool for the investigation of the electron Landé g factor and the spin dynamics in bulk and low-dimensional semiconductors. The technique has several advantages including high sensitivity, broad applicability, and ease of implementation and, therefore, proves to be superior to other techniques as, e.g., the Hanle-effect, spin-flip Raman scattering, and conduction band spin-resonance. We demonstrate the utility of this technique by the study of the temperature dependence of the electron Landé g factor g* in GaAs up to room temperature. We present as well results on the temperature dependence of g* in InP, the dependence of g* on quantum film thickness in GaAs-AlGaAs heterostructures, and the anisotropy of g* in quantum films and wires. A modification of this technique yields the direction of the spin rotation, i.e., the sign of g*. Finally, recent results on spin quantum beats in microcavities will be presented.

AB - Spin quantum-beat spectroscopy is presented as a powerful tool for the investigation of the electron Landé g factor and the spin dynamics in bulk and low-dimensional semiconductors. The technique has several advantages including high sensitivity, broad applicability, and ease of implementation and, therefore, proves to be superior to other techniques as, e.g., the Hanle-effect, spin-flip Raman scattering, and conduction band spin-resonance. We demonstrate the utility of this technique by the study of the temperature dependence of the electron Landé g factor g* in GaAs up to room temperature. We present as well results on the temperature dependence of g* in InP, the dependence of g* on quantum film thickness in GaAs-AlGaAs heterostructures, and the anisotropy of g* in quantum films and wires. A modification of this technique yields the direction of the spin rotation, i.e., the sign of g*. Finally, recent results on spin quantum beats in microcavities will be presented.

UR - http://www.scopus.com/inward/record.url?scp=0030230845&partnerID=8YFLogxK

U2 - 10.1109/2944.571776

DO - 10.1109/2944.571776

M3 - Article

AN - SCOPUS:0030230845

VL - 2

SP - 747

EP - 755

JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

SN - 1077-260X

IS - 3

ER -