Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 103903 |
| Fachzeitschrift | Review of Scientific Instruments |
| Jahrgang | 78 |
| Ausgabenummer | 10 |
| Publikationsstatus | Veröffentlicht - 5 Okt. 2007 |
Abstract
Spin noise spectroscopy in semiconductors is an optical method that allows nearly perturbation free measurements of the spin dynamics of electrons in thermal equilibrium. The article explains the basic principles of spin noise spectroscopy and introduces an optimized experimental setup which promotes spin noise spectroscopy to an extraordinary sensitive tool. Exemplary measurements on n-doped bulk GaAs yield the temperature dependence of the electron spin relaxation time and the electron Lande g factor and reveal a dependence of the spin relaxation time on the laser probe wavelength. The magnitude and wavelength dependence of the measured spin noise signal compares well to basic calculations.
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- Instrumentierung
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in: Review of Scientific Instruments, Jahrgang 78, Nr. 10, 103903, 05.10.2007.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Spin noise spectroscopy in semiconductors
AU - Römer, Michael
AU - Hübner, Jens
AU - Oestreich, Michael
N1 - Funding information: The authors thank P. Altermatt and co-workers from the ISF Hameln for applying the antireflection coating to the samples and acknowledge the funding by the German Science Foundation (DFG) and the Federal Ministry for Education and Research (BMBF) NanoQuit program.
PY - 2007/10/5
Y1 - 2007/10/5
N2 - Spin noise spectroscopy in semiconductors is an optical method that allows nearly perturbation free measurements of the spin dynamics of electrons in thermal equilibrium. The article explains the basic principles of spin noise spectroscopy and introduces an optimized experimental setup which promotes spin noise spectroscopy to an extraordinary sensitive tool. Exemplary measurements on n-doped bulk GaAs yield the temperature dependence of the electron spin relaxation time and the electron Lande g factor and reveal a dependence of the spin relaxation time on the laser probe wavelength. The magnitude and wavelength dependence of the measured spin noise signal compares well to basic calculations.
AB - Spin noise spectroscopy in semiconductors is an optical method that allows nearly perturbation free measurements of the spin dynamics of electrons in thermal equilibrium. The article explains the basic principles of spin noise spectroscopy and introduces an optimized experimental setup which promotes spin noise spectroscopy to an extraordinary sensitive tool. Exemplary measurements on n-doped bulk GaAs yield the temperature dependence of the electron spin relaxation time and the electron Lande g factor and reveal a dependence of the spin relaxation time on the laser probe wavelength. The magnitude and wavelength dependence of the measured spin noise signal compares well to basic calculations.
UR - http://www.scopus.com/inward/record.url?scp=36049019368&partnerID=8YFLogxK
U2 - 10.1063/1.2794059
DO - 10.1063/1.2794059
M3 - Article
C2 - 17979431
AN - SCOPUS:36049019368
VL - 78
JO - Review of Scientific Instruments
JF - Review of Scientific Instruments
SN - 0034-6748
IS - 10
M1 - 103903
ER -