Spin noise spectroscopy in semiconductors

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

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  • Universität Regensburg
  • ETH Zürich
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OriginalspracheEnglisch
Titel des SammelwerksSpintronics II
PublikationsstatusVeröffentlicht - 18 Aug. 2009
VeranstaltungSpintronics II - San Diego, CA, USA / Vereinigte Staaten
Dauer: 2 Aug. 20095 Aug. 2009

Publikationsreihe

NameProceedings of SPIE - The International Society for Optical Engineering
Band7398
ISSN (Print)0277-786X

Abstract

We demonstrate spin noise spectroscopy as an efficient and surprisingly sensitive experimental tool to measure the spin dynamics of free and localized carriers in semiconductors. The technique suppresses perturbations and gives access to intrinsic spin relaxation times by omitting optical excitation. We show the power of spin noise spectroscopy for basic physics by measurements on n-type modulation doped (110) GaAs quantum wells. The measurements reveal that the spin relaxation times are limited by stochastic spin-orbit fields and that the spin can be used as marker for the observation of electron diffusion processes at thermal equilibrium. We show the power of spin noise spectroscopy for applied physics, by three dimensional measurements of the doping distribution in direct semiconductors.

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Spin noise spectroscopy in semiconductors. / Oestreich, Michael; Römer, Michael; Müller, Georg et al.
Spintronics II. 2009. 739802 (Proceedings of SPIE - The International Society for Optical Engineering; Band 7398).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Oestreich, M, Römer, M, Müller, G, Schuh, D, Wegscheider, W & Hübner, J 2009, Spin noise spectroscopy in semiconductors. in Spintronics II., 739802, Proceedings of SPIE - The International Society for Optical Engineering, Bd. 7398, Spintronics II, San Diego, CA, USA / Vereinigte Staaten, 2 Aug. 2009. https://doi.org/10.1117/12.824177
Oestreich, M., Römer, M., Müller, G., Schuh, D., Wegscheider, W., & Hübner, J. (2009). Spin noise spectroscopy in semiconductors. In Spintronics II Artikel 739802 (Proceedings of SPIE - The International Society for Optical Engineering; Band 7398). https://doi.org/10.1117/12.824177
Oestreich M, Römer M, Müller G, Schuh D, Wegscheider W, Hübner J. Spin noise spectroscopy in semiconductors. in Spintronics II. 2009. 739802. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.824177
Oestreich, Michael ; Römer, Michael ; Müller, Georg et al. / Spin noise spectroscopy in semiconductors. Spintronics II. 2009. (Proceedings of SPIE - The International Society for Optical Engineering).
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T1 - Spin noise spectroscopy in semiconductors

AU - Oestreich, Michael

AU - Römer, Michael

AU - Müller, Georg

AU - Schuh, Dieter

AU - Wegscheider, Werner

AU - Hübner, Jens

PY - 2009/8/18

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N2 - We demonstrate spin noise spectroscopy as an efficient and surprisingly sensitive experimental tool to measure the spin dynamics of free and localized carriers in semiconductors. The technique suppresses perturbations and gives access to intrinsic spin relaxation times by omitting optical excitation. We show the power of spin noise spectroscopy for basic physics by measurements on n-type modulation doped (110) GaAs quantum wells. The measurements reveal that the spin relaxation times are limited by stochastic spin-orbit fields and that the spin can be used as marker for the observation of electron diffusion processes at thermal equilibrium. We show the power of spin noise spectroscopy for applied physics, by three dimensional measurements of the doping distribution in direct semiconductors.

AB - We demonstrate spin noise spectroscopy as an efficient and surprisingly sensitive experimental tool to measure the spin dynamics of free and localized carriers in semiconductors. The technique suppresses perturbations and gives access to intrinsic spin relaxation times by omitting optical excitation. We show the power of spin noise spectroscopy for basic physics by measurements on n-type modulation doped (110) GaAs quantum wells. The measurements reveal that the spin relaxation times are limited by stochastic spin-orbit fields and that the spin can be used as marker for the observation of electron diffusion processes at thermal equilibrium. We show the power of spin noise spectroscopy for applied physics, by three dimensional measurements of the doping distribution in direct semiconductors.

KW - Noise

KW - Optics

KW - Semiconductor

KW - Spin dynamics

KW - Spintronics

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

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ER -

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