Spin noise spectroscopy in GaAs

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OriginalspracheEnglisch
Aufsatznummer216603
FachzeitschriftPhysical Review Letters
Jahrgang95
Ausgabenummer21
PublikationsstatusVeröffentlicht - 17 Nov. 2005

Abstract

We observe the noise spectrum of electron spins in bulk GaAs by Faraday-rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron-spin dynamics in semiconductors. We measure exemplarily the electron-spin relaxation time and the electron Landé g factor in n-doped GaAs at low temperatures and find good agreement of the measured noise spectrum with a theory based on Poisson distribution probability.

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Spin noise spectroscopy in GaAs. / Oestreich, M.; Römer, Michael; Haug, R. J. et al.
in: Physical Review Letters, Jahrgang 95, Nr. 21, 216603, 17.11.2005.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Oestreich M, Römer M, Haug RJ, Hägele D. Spin noise spectroscopy in GaAs. Physical Review Letters. 2005 Nov 17;95(21):216603. doi: 10.1103/PhysRevLett.95.216603, 10.15488/2088
Oestreich, M. ; Römer, Michael ; Haug, R. J. et al. / Spin noise spectroscopy in GaAs. in: Physical Review Letters. 2005 ; Jahrgang 95, Nr. 21.
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