Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 216603 |
| Fachzeitschrift | Physical Review Letters |
| Jahrgang | 95 |
| Ausgabenummer | 21 |
| Publikationsstatus | Veröffentlicht - 17 Nov. 2005 |
Abstract
We observe the noise spectrum of electron spins in bulk GaAs by Faraday-rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron-spin dynamics in semiconductors. We measure exemplarily the electron-spin relaxation time and the electron Landé g factor in n-doped GaAs at low temperatures and find good agreement of the measured noise spectrum with a theory based on Poisson distribution probability.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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in: Physical Review Letters, Jahrgang 95, Nr. 21, 216603, 17.11.2005.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Spin noise spectroscopy in GaAs
AU - Oestreich, M.
AU - Römer, Michael
AU - Haug, R. J.
AU - Hägele, D.
PY - 2005/11/17
Y1 - 2005/11/17
N2 - We observe the noise spectrum of electron spins in bulk GaAs by Faraday-rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron-spin dynamics in semiconductors. We measure exemplarily the electron-spin relaxation time and the electron Landé g factor in n-doped GaAs at low temperatures and find good agreement of the measured noise spectrum with a theory based on Poisson distribution probability.
AB - We observe the noise spectrum of electron spins in bulk GaAs by Faraday-rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron-spin dynamics in semiconductors. We measure exemplarily the electron-spin relaxation time and the electron Landé g factor in n-doped GaAs at low temperatures and find good agreement of the measured noise spectrum with a theory based on Poisson distribution probability.
UR - http://www.scopus.com/inward/record.url?scp=28844472827&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.95.216603
DO - 10.1103/PhysRevLett.95.216603
M3 - Article
AN - SCOPUS:28844472827
VL - 95
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 21
M1 - 216603
ER -