Spin effects in the local density of states of GaAs

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OriginalspracheEnglisch
Seiten (von - bis)495-501
Seitenumfang7
FachzeitschriftEurophysics Letters (EPL)
Jahrgang54
Ausgabenummer4
PublikationsstatusVeröffentlicht - 11 Mai 2001

Abstract

We present spin-resolved measurements of the local density of states in Si-doped GaAs. Both spin components exhibit strong mesoscopic fluctuations. In the regime of the lowest Landau band, the main features of the spin-up and spin-down components of the local density of states are found to be identical apart from Zeeman splitting. Based on this observation, we introduce a new method to measure the g-factor in a material where macroscopic methods are severely restricted by disorder. Differences between the spin-up and spin-down components are discussed in terms of spin relaxation due to spin-orbit coupling.

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Spin effects in the local density of states of GaAs. / König, P.; Schmidt, T.; Haug, R. J.
in: Europhysics Letters (EPL), Jahrgang 54, Nr. 4, 11.05.2001, S. 495-501.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

König P, Schmidt T, Haug RJ. Spin effects in the local density of states of GaAs. Europhysics Letters (EPL). 2001 Mai 11;54(4):495-501. doi: 10.1209/epl/i2001-00272-8
König, P. ; Schmidt, T. ; Haug, R. J. / Spin effects in the local density of states of GaAs. in: Europhysics Letters (EPL). 2001 ; Jahrgang 54, Nr. 4. S. 495-501.
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AU - Haug, R. J.

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