Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 3678-3681 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica Status Solidi (B) Basic Research |
| Jahrgang | 243 |
| Ausgabenummer | 14 |
| Publikationsstatus | Veröffentlicht - 1 Nov. 2006 |
Abstract
Spin-resolved single-electron tunneling in GaAs/AlGaAs double-barrier resonant tunneling structures is used to investigate the spin-splitting of fully quantized electronic states. With the use of magneto-tunneling spectroscopy we evaluated the Landé g-factor of GaAs quantum dots of different confinement strengths. We observe with increasing confinement a shift of the Landé-factor from the bulk GaAs-value towards positive values. Our results are compared to a multiband-k·p-calculation.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi (B) Basic Research, Jahrgang 243, Nr. 14, 01.11.2006, S. 3678-3681.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Spin effects in quantum dots
AU - Könemann, J.
AU - Winkler, R.
AU - Maude, D. K.
AU - Haug, R. J.
PY - 2006/11/1
Y1 - 2006/11/1
N2 - Spin-resolved single-electron tunneling in GaAs/AlGaAs double-barrier resonant tunneling structures is used to investigate the spin-splitting of fully quantized electronic states. With the use of magneto-tunneling spectroscopy we evaluated the Landé g-factor of GaAs quantum dots of different confinement strengths. We observe with increasing confinement a shift of the Landé-factor from the bulk GaAs-value towards positive values. Our results are compared to a multiband-k·p-calculation.
AB - Spin-resolved single-electron tunneling in GaAs/AlGaAs double-barrier resonant tunneling structures is used to investigate the spin-splitting of fully quantized electronic states. With the use of magneto-tunneling spectroscopy we evaluated the Landé g-factor of GaAs quantum dots of different confinement strengths. We observe with increasing confinement a shift of the Landé-factor from the bulk GaAs-value towards positive values. Our results are compared to a multiband-k·p-calculation.
UR - http://www.scopus.com/inward/record.url?scp=37849187809&partnerID=8YFLogxK
U2 - 10.1002/pssb.200642292
DO - 10.1002/pssb.200642292
M3 - Article
AN - SCOPUS:37849187809
VL - 243
SP - 3678
EP - 3681
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
SN - 0370-1972
IS - 14
ER -