Spin Droplet Formation in Quantum Dots

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

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  • University of Jyvaskyla
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OriginalspracheEnglisch
Titel des SammelwerksPhysics of Semiconductors
Untertitel30th International Conference on the Physics of Semiconductors, ICPS-30
Seiten301-302
Seitenumfang2
PublikationsstatusVeröffentlicht - 28 Dez. 2011
Veranstaltung30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Südkorea
Dauer: 25 Juli 201030 Juli 2010

Publikationsreihe

NameAIP Conference Proceedings
Band1399
ISSN (Print)0094-243X
ISSN (elektronisch)1551-7616

Abstract

A lateral quantum dot with approx. 50 electrons is analyzed in high perpendicular magnetic fields. In a regime with two Landau levels (LL) in the quantum dot information about the spin structure is gained by investigating the position of Coulomb blockade peaks. A typical zig-zag pattern is observed which is roughly explained with the so called Constant Interaction model. However, only states from LL0 can be approximated with this model, while for LL1 more complex electron-electron interactions must be included. This is done with spin density functional theory calculations. As a result, full spin polarization is found for LL1, the so called spin droplet.

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Spin Droplet Formation in Quantum Dots. / Rogge, M. C.; Räsänen, E.; Haug, R. J.
Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. S. 301-302 (AIP Conference Proceedings; Band 1399).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Rogge, MC, Räsänen, E & Haug, RJ 2011, Spin Droplet Formation in Quantum Dots. in Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors, ICPS-30. AIP Conference Proceedings, Bd. 1399, S. 301-302, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Südkorea, 25 Juli 2010. https://doi.org/10.1063/1.3666373, https://doi.org/10.15488/2802
Rogge, M. C., Räsänen, E., & Haug, R. J. (2011). Spin Droplet Formation in Quantum Dots. In Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors, ICPS-30 (S. 301-302). (AIP Conference Proceedings; Band 1399). https://doi.org/10.1063/1.3666373, https://doi.org/10.15488/2802
Rogge MC, Räsänen E, Haug RJ. Spin Droplet Formation in Quantum Dots. in Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. S. 301-302. (AIP Conference Proceedings). doi: 10.1063/1.3666373, 10.15488/2802
Rogge, M. C. ; Räsänen, E. ; Haug, R. J. / Spin Droplet Formation in Quantum Dots. Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. S. 301-302 (AIP Conference Proceedings).
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@inproceedings{0c2ad1f146c34893a3cf7cba3ddc528d,
title = "Spin Droplet Formation in Quantum Dots",
abstract = "A lateral quantum dot with approx. 50 electrons is analyzed in high perpendicular magnetic fields. In a regime with two Landau levels (LL) in the quantum dot information about the spin structure is gained by investigating the position of Coulomb blockade peaks. A typical zig-zag pattern is observed which is roughly explained with the so called Constant Interaction model. However, only states from LL0 can be approximated with this model, while for LL1 more complex electron-electron interactions must be included. This is done with spin density functional theory calculations. As a result, full spin polarization is found for LL1, the so called spin droplet.",
keywords = "Coulomb blockade, Quantum dots, single-electron tunneling",
author = "Rogge, {M. C.} and E. R{\"a}s{\"a}nen and Haug, {R. J.}",
year = "2011",
month = dec,
day = "28",
doi = "10.1063/1.3666373",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "301--302",
booktitle = "Physics of Semiconductors",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",

}

Download

TY - GEN

T1 - Spin Droplet Formation in Quantum Dots

AU - Rogge, M. C.

AU - Räsänen, E.

AU - Haug, R. J.

PY - 2011/12/28

Y1 - 2011/12/28

N2 - A lateral quantum dot with approx. 50 electrons is analyzed in high perpendicular magnetic fields. In a regime with two Landau levels (LL) in the quantum dot information about the spin structure is gained by investigating the position of Coulomb blockade peaks. A typical zig-zag pattern is observed which is roughly explained with the so called Constant Interaction model. However, only states from LL0 can be approximated with this model, while for LL1 more complex electron-electron interactions must be included. This is done with spin density functional theory calculations. As a result, full spin polarization is found for LL1, the so called spin droplet.

AB - A lateral quantum dot with approx. 50 electrons is analyzed in high perpendicular magnetic fields. In a regime with two Landau levels (LL) in the quantum dot information about the spin structure is gained by investigating the position of Coulomb blockade peaks. A typical zig-zag pattern is observed which is roughly explained with the so called Constant Interaction model. However, only states from LL0 can be approximated with this model, while for LL1 more complex electron-electron interactions must be included. This is done with spin density functional theory calculations. As a result, full spin polarization is found for LL1, the so called spin droplet.

KW - Coulomb blockade

KW - Quantum dots

KW - single-electron tunneling

UR - http://www.scopus.com/inward/record.url?scp=84855514148&partnerID=8YFLogxK

U2 - 10.1063/1.3666373

DO - 10.1063/1.3666373

M3 - Conference contribution

AN - SCOPUS:84855514148

SN - 9780735410022

T3 - AIP Conference Proceedings

SP - 301

EP - 302

BT - Physics of Semiconductors

T2 - 30th International Conference on the Physics of Semiconductors, ICPS-30

Y2 - 25 July 2010 through 30 July 2010

ER -

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