Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Proceedings of SPIE: Photonics for Quantum 2021 |
| Untertitel | 12–16 July 2021 Online Only, United States |
| Herausgeber (Verlag) | SPIE |
| ISBN (elektronisch) | 9781510645264 |
| Publikationsstatus | Veröffentlicht - 11 Juli 2021 |
| Veranstaltung | Photonics for Quantum 2021 - Virtual, Online, USA / Vereinigte Staaten Dauer: 12 Juli 2021 → 16 Juli 2021 |
Publikationsreihe
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Band | 11844 |
| ISSN (Print) | 0277-786X |
| ISSN (elektronisch) | 1996-756X |
Abstract
Single photon emitters play a central role in the rapidly developing field of quantum technologies. Therefor new single photon sources are highly sought after. Understanding their properties is essential for their applications in integrated quantum technologies. Defect centers in hexagonal boron nitride (hBN) have become prominent candidates as single photon sources during the last years due to their highly favorable properties, like bright emission, narrow linewidth, and high photostability at even at room-temperature. Several recent studies have shown a spectral dependency on the excitation wavelength of fluorescence behavior of these emitters1,2. In general, both the intensity and second order autocorrelation function, as well as the emission spectrum, vary with the excitation wavelength. By tuning the excitation over a broad range inside the visible spectrum and performing measurements regarding the quantum nature as well as the spectral decomposition of the emission light, we gain further insight to the characteristic properties and energy level schemes of these defect centers. Especially interesting for the energetic investigation of individual emitters is the appearance of additional sharp emission lines at higher excitation frequencies. These lines can be interpreted as higher order excited states of the same quantum system. To verify the assumption of a single system as the origin of these additional states, spectral cross correlations between individual lines are measured in a free beam HBT setup. Further analysis of these excited states can be done by performing fluorescence life time measurements, as well as comparison between the emission rates in order to determine the efficiency of the different decay channels.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Informatik (insg.)
- Angewandte Informatik
- Mathematik (insg.)
- Angewandte Mathematik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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Proceedings of SPIE: Photonics for Quantum 2021: 12–16 July 2021 Online Only, United States. SPIE, 2021. 1184418 (Proceedings of SPIE - The International Society for Optical Engineering; Band 11844).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Spectroscopic Analysis of Defect Centers in hBN
AU - Tieben, P.
AU - Shiyani, B.
AU - Bahrami, N.
AU - Schell, A. W.
N1 - Funding Information: The authors acknowledge funding by the Deutsche Forschungsgemeinschaft (DFG, German Germany´s Excellence Strategy - EXC - 2123 QuantumFrontiers – 390837967.
PY - 2021/7/11
Y1 - 2021/7/11
N2 - Single photon emitters play a central role in the rapidly developing field of quantum technologies. Therefor new single photon sources are highly sought after. Understanding their properties is essential for their applications in integrated quantum technologies. Defect centers in hexagonal boron nitride (hBN) have become prominent candidates as single photon sources during the last years due to their highly favorable properties, like bright emission, narrow linewidth, and high photostability at even at room-temperature. Several recent studies have shown a spectral dependency on the excitation wavelength of fluorescence behavior of these emitters1,2. In general, both the intensity and second order autocorrelation function, as well as the emission spectrum, vary with the excitation wavelength. By tuning the excitation over a broad range inside the visible spectrum and performing measurements regarding the quantum nature as well as the spectral decomposition of the emission light, we gain further insight to the characteristic properties and energy level schemes of these defect centers. Especially interesting for the energetic investigation of individual emitters is the appearance of additional sharp emission lines at higher excitation frequencies. These lines can be interpreted as higher order excited states of the same quantum system. To verify the assumption of a single system as the origin of these additional states, spectral cross correlations between individual lines are measured in a free beam HBT setup. Further analysis of these excited states can be done by performing fluorescence life time measurements, as well as comparison between the emission rates in order to determine the efficiency of the different decay channels.
AB - Single photon emitters play a central role in the rapidly developing field of quantum technologies. Therefor new single photon sources are highly sought after. Understanding their properties is essential for their applications in integrated quantum technologies. Defect centers in hexagonal boron nitride (hBN) have become prominent candidates as single photon sources during the last years due to their highly favorable properties, like bright emission, narrow linewidth, and high photostability at even at room-temperature. Several recent studies have shown a spectral dependency on the excitation wavelength of fluorescence behavior of these emitters1,2. In general, both the intensity and second order autocorrelation function, as well as the emission spectrum, vary with the excitation wavelength. By tuning the excitation over a broad range inside the visible spectrum and performing measurements regarding the quantum nature as well as the spectral decomposition of the emission light, we gain further insight to the characteristic properties and energy level schemes of these defect centers. Especially interesting for the energetic investigation of individual emitters is the appearance of additional sharp emission lines at higher excitation frequencies. These lines can be interpreted as higher order excited states of the same quantum system. To verify the assumption of a single system as the origin of these additional states, spectral cross correlations between individual lines are measured in a free beam HBT setup. Further analysis of these excited states can be done by performing fluorescence life time measurements, as well as comparison between the emission rates in order to determine the efficiency of the different decay channels.
KW - 2-d material
KW - hBN
KW - quantum emitter
KW - single photons
KW - solid-state emitter
KW - spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=85113874030&partnerID=8YFLogxK
U2 - 10.1117/12.2600952
DO - 10.1117/12.2600952
M3 - Conference contribution
AN - SCOPUS:85113874030
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Proceedings of SPIE: Photonics for Quantum 2021
PB - SPIE
T2 - Photonics for Quantum 2021
Y2 - 12 July 2021 through 16 July 2021
ER -