Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Program |
| Untertitel | 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 |
| Seiten | 1144-1149 |
| Seitenumfang | 6 |
| Publikationsstatus | Veröffentlicht - 19 Dez. 2012 |
| Veranstaltung | 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, USA / Vereinigte Staaten Dauer: 19 Juni 2011 → 24 Juni 2011 |
Publikationsreihe
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
A next generation material for Si surface passivation is atomic layer deposited (ALD) Al 2O 3. However, conventional time-resolved ALD is limited by its low deposition rate. Initially, a high-deposition-rate prototype ALD reactor based on the spatially-separated ALD principle has been developed, with Al 2O 3 deposition rates up to 1.2 nm/s. Later, the spatial ALD technique has been transferred to an actual in-line process development tool (PDT) for commercial high-throughput ALD of Al 2O 3, resulting in a deposition rate of 30 nm/min. The passivation quality and uniformity of the spatially-separated ALD Al 2O 3 films are evaluated on p- and n-type Si, applying quasi-steady-state photo-conductance, carrier density imaging and infrared lifetime mapping. In all cases, a spatial ALD Al 2O 3 layer of only 10 nm reached an excellent passivation quality and uniformity, comparable to reference wafers passivated by equivalent temporal plasma-assisted or thermal ALD Al 2O 3. Effective surface recombination velocities as low as 1.1 or 2.9 cm/s were obtained after annealing at 350°C or firing, respectively. Using spatial ALD Al 2O 3 passivated local Al back surface field p-type Si solar cells, the sufficient passivation of this high-throughput Al 2O 3 layer is evaluated: an average gain in open circuit voltage as compared to SiO x rear passivated i-PERC cells is obtained.
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- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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Program : 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2012. S. 1144-1149 6186155 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Spatially-separated atomic layer deposition of Al 2O 3, a new option for high-throughput si solar cell passivation
AU - Vermang, B.
AU - Werner, F.
AU - Stals, W.
AU - Lorenz, A.
AU - Rothschild, A.
AU - John, J.
AU - Poortmans, J.
AU - Mertens, R.
AU - Gortzen, R.
AU - Poodt, P.
AU - Roozeboom, F.
AU - Schmidt, J.
PY - 2012/12/19
Y1 - 2012/12/19
N2 - A next generation material for Si surface passivation is atomic layer deposited (ALD) Al 2O 3. However, conventional time-resolved ALD is limited by its low deposition rate. Initially, a high-deposition-rate prototype ALD reactor based on the spatially-separated ALD principle has been developed, with Al 2O 3 deposition rates up to 1.2 nm/s. Later, the spatial ALD technique has been transferred to an actual in-line process development tool (PDT) for commercial high-throughput ALD of Al 2O 3, resulting in a deposition rate of 30 nm/min. The passivation quality and uniformity of the spatially-separated ALD Al 2O 3 films are evaluated on p- and n-type Si, applying quasi-steady-state photo-conductance, carrier density imaging and infrared lifetime mapping. In all cases, a spatial ALD Al 2O 3 layer of only 10 nm reached an excellent passivation quality and uniformity, comparable to reference wafers passivated by equivalent temporal plasma-assisted or thermal ALD Al 2O 3. Effective surface recombination velocities as low as 1.1 or 2.9 cm/s were obtained after annealing at 350°C or firing, respectively. Using spatial ALD Al 2O 3 passivated local Al back surface field p-type Si solar cells, the sufficient passivation of this high-throughput Al 2O 3 layer is evaluated: an average gain in open circuit voltage as compared to SiO x rear passivated i-PERC cells is obtained.
AB - A next generation material for Si surface passivation is atomic layer deposited (ALD) Al 2O 3. However, conventional time-resolved ALD is limited by its low deposition rate. Initially, a high-deposition-rate prototype ALD reactor based on the spatially-separated ALD principle has been developed, with Al 2O 3 deposition rates up to 1.2 nm/s. Later, the spatial ALD technique has been transferred to an actual in-line process development tool (PDT) for commercial high-throughput ALD of Al 2O 3, resulting in a deposition rate of 30 nm/min. The passivation quality and uniformity of the spatially-separated ALD Al 2O 3 films are evaluated on p- and n-type Si, applying quasi-steady-state photo-conductance, carrier density imaging and infrared lifetime mapping. In all cases, a spatial ALD Al 2O 3 layer of only 10 nm reached an excellent passivation quality and uniformity, comparable to reference wafers passivated by equivalent temporal plasma-assisted or thermal ALD Al 2O 3. Effective surface recombination velocities as low as 1.1 or 2.9 cm/s were obtained after annealing at 350°C or firing, respectively. Using spatial ALD Al 2O 3 passivated local Al back surface field p-type Si solar cells, the sufficient passivation of this high-throughput Al 2O 3 layer is evaluated: an average gain in open circuit voltage as compared to SiO x rear passivated i-PERC cells is obtained.
UR - http://www.scopus.com/inward/record.url?scp=84861079750&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2011.6186155
DO - 10.1109/PVSC.2011.6186155
M3 - Conference contribution
AN - SCOPUS:84861079750
SN - 9781424499656
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1144
EP - 1149
BT - Program
T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Y2 - 19 June 2011 through 24 June 2011
ER -