Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 112105 |
| Fachzeitschrift | Applied Physics Letters |
| Jahrgang | 94 |
| Ausgabenummer | 11 |
| Publikationsstatus | Veröffentlicht - 16 März 2009 |
Abstract
We propose and demonstrate spin noise spectroscopy as an efficient, noncontact method to measure doping concentrations in semiconductors with high accuracy and high spatial resolution. In a proof of concept study, two different doping levels in a silicon-doped GaAs stack are depth resolved with a relative accuracy of up to 5% and a spatial accuracy better than 50 μm. The method promises three-dimensional doping measurements in direct semiconductors with submicrometer resolution even at extremely low doping concentrations.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied Physics Letters, Jahrgang 94, Nr. 11, 112105, 16.03.2009.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Spatially resolved doping concentration measurement in semiconductors via spin noise spectroscopy
AU - Römer, Michael
AU - Hübner, Jens
AU - Oestreich, Michael
N1 - Funding information: This work has been supported by the Deutsche Forschungsgemeinschaft and the German Federal Ministry of Education and Research (BMBF) by the funding program nanoQUIT.
PY - 2009/3/16
Y1 - 2009/3/16
N2 - We propose and demonstrate spin noise spectroscopy as an efficient, noncontact method to measure doping concentrations in semiconductors with high accuracy and high spatial resolution. In a proof of concept study, two different doping levels in a silicon-doped GaAs stack are depth resolved with a relative accuracy of up to 5% and a spatial accuracy better than 50 μm. The method promises three-dimensional doping measurements in direct semiconductors with submicrometer resolution even at extremely low doping concentrations.
AB - We propose and demonstrate spin noise spectroscopy as an efficient, noncontact method to measure doping concentrations in semiconductors with high accuracy and high spatial resolution. In a proof of concept study, two different doping levels in a silicon-doped GaAs stack are depth resolved with a relative accuracy of up to 5% and a spatial accuracy better than 50 μm. The method promises three-dimensional doping measurements in direct semiconductors with submicrometer resolution even at extremely low doping concentrations.
UR - http://www.scopus.com/inward/record.url?scp=63049117161&partnerID=8YFLogxK
U2 - 10.1063/1.3098074
DO - 10.1063/1.3098074
M3 - Article
AN - SCOPUS:63049117161
VL - 94
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 11
M1 - 112105
ER -