Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Proceedings of the International Colloquium Modelling of Material Processing |
| Untertitel | Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover |
| Erscheinungsort | Riga |
| Seiten | 54-59 |
| Publikationsstatus | Veröffentlicht - 1999 |
| Veranstaltung | International Scientific Colloquium Modelling of Material Processing - Riga Dauer: 28 Mai 1999 → 29 Mai 1999 |
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Some aspects of numerical modelling of turbulent low Re melt flow during CZ silicon single crystal growth. / Krauze, Armands; Muiznieks, Andris; Wetzel, T. et al.
Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, 1999. S. 54-59.
Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, 1999. S. 54-59.
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung
Krauze, A, Muiznieks, A, Wetzel, T, Raming, G, Mühlbauer, A, Buligins, L & Virbulis, J 1999, Some aspects of numerical modelling of turbulent low Re melt flow during CZ silicon single crystal growth. in Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, S. 54-59, International Scientific Colloquium Modelling of Material Processing, Riga, 28 Mai 1999.
Krauze, A., Muiznieks, A., Wetzel, T., Raming, G., Mühlbauer, A., Buligins, L., & Virbulis, J. (1999). Some aspects of numerical modelling of turbulent low Re melt flow during CZ silicon single crystal growth. In Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover (S. 54-59).
Krauze A, Muiznieks A, Wetzel T, Raming G, Mühlbauer A, Buligins L et al. Some aspects of numerical modelling of turbulent low Re melt flow during CZ silicon single crystal growth. in Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga. 1999. S. 54-59
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@inproceedings{fe4a8fdde3d44daa9f79e5a922055ec7,
title = "Some aspects of numerical modelling of turbulent low Re melt flow during CZ silicon single crystal growth",
author = "Armands Krauze and Andris Muiznieks and T. Wetzel and Georg Raming and Alfred M{\"u}hlbauer and L. Buligins and J. Virbulis",
year = "1999",
language = "English",
isbn = "9984-572-38-2",
pages = "54--59",
booktitle = "Proceedings of the International Colloquium Modelling of Material Processing",
note = "International Scientific Colloquium Modelling of Material Processing ; Conference date: 28-05-1999 Through 29-05-1999",
}
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TY - GEN
T1 - Some aspects of numerical modelling of turbulent low Re melt flow during CZ silicon single crystal growth
AU - Krauze, Armands
AU - Muiznieks, Andris
AU - Wetzel, T.
AU - Raming, Georg
AU - Mühlbauer, Alfred
AU - Buligins, L.
AU - Virbulis, J.
PY - 1999
Y1 - 1999
M3 - Conference contribution
SN - 9984-572-38-2
SP - 54
EP - 59
BT - Proceedings of the International Colloquium Modelling of Material Processing
CY - Riga
T2 - International Scientific Colloquium Modelling of Material Processing
Y2 - 28 May 1999 through 29 May 1999
ER -