Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 143-147 |
| Seitenumfang | 5 |
| Fachzeitschrift | Applied surface science |
| Jahrgang | 254 |
| Ausgabenummer | 1 SPEC. ISS. |
| Frühes Online-Datum | 31 Juli 2007 |
| Publikationsstatus | Veröffentlicht - 31 Okt. 2007 |
Abstract
At room temperature deposited Ge films (thickness < 3 nm) homogeneously wet CaF 2 /Si(1 1 1). The films are crystalline but exhibit granular structure. The grain size decreases with increasing film thickness. The quality of the homogeneous films is improved by annealing up to 200 °C. Ge films break up into islands if higher annealing temperatures are used as demonstrated combining spot profile analysis low energy electron diffraction (SPA-LEED) with auger electron spectroscopy (AES). Annealing up to 600 °C reduces the lateral size of the Ge islands while the surface fraction covered by Ge islands is constant. The CaF 2 film is decomposed if higher annealing temperatures are used. This effect is probably due to the formation of GeF x complexes which desorb at these temperatures.
ASJC Scopus Sachgebiete
- Chemie (insg.)
- Allgemeine Chemie
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
- Physik und Astronomie (insg.)
- Oberflächen und Grenzflächen
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
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in: Applied surface science, Jahrgang 254, Nr. 1 SPEC. ISS., 31.10.2007, S. 143-147.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Solid phase epitaxy of Ge films on CaF 2 /Si(1 1 1)
AU - Rugeramigabo, E. P.
AU - Deiter, C.
AU - Wollschläger, J.
PY - 2007/10/31
Y1 - 2007/10/31
N2 - At room temperature deposited Ge films (thickness < 3 nm) homogeneously wet CaF 2 /Si(1 1 1). The films are crystalline but exhibit granular structure. The grain size decreases with increasing film thickness. The quality of the homogeneous films is improved by annealing up to 200 °C. Ge films break up into islands if higher annealing temperatures are used as demonstrated combining spot profile analysis low energy electron diffraction (SPA-LEED) with auger electron spectroscopy (AES). Annealing up to 600 °C reduces the lateral size of the Ge islands while the surface fraction covered by Ge islands is constant. The CaF 2 film is decomposed if higher annealing temperatures are used. This effect is probably due to the formation of GeF x complexes which desorb at these temperatures.
AB - At room temperature deposited Ge films (thickness < 3 nm) homogeneously wet CaF 2 /Si(1 1 1). The films are crystalline but exhibit granular structure. The grain size decreases with increasing film thickness. The quality of the homogeneous films is improved by annealing up to 200 °C. Ge films break up into islands if higher annealing temperatures are used as demonstrated combining spot profile analysis low energy electron diffraction (SPA-LEED) with auger electron spectroscopy (AES). Annealing up to 600 °C reduces the lateral size of the Ge islands while the surface fraction covered by Ge islands is constant. The CaF 2 film is decomposed if higher annealing temperatures are used. This effect is probably due to the formation of GeF x complexes which desorb at these temperatures.
KW - CaF
KW - Germanium
KW - Molecular beam epitaxy
KW - Semiconductor-insulator multilayers
KW - Silicon
KW - Solid phase epitaxy
KW - Spot profile analysis of low energy electron diffraction
UR - http://www.scopus.com/inward/record.url?scp=35148863622&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2007.07.167
DO - 10.1016/j.apsusc.2007.07.167
M3 - Article
AN - SCOPUS:35148863622
VL - 254
SP - 143
EP - 147
JO - Applied surface science
JF - Applied surface science
SN - 0169-4332
IS - 1 SPEC. ISS.
ER -