Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autorschaft

  • V. V. Afanas'ev
  • M. Badylevich
  • A. Stesmans
  • A. Laha
  • H. J. Osten
  • A. Fissel

Organisationseinheiten

Externe Organisationen

  • KU Leuven
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Aufsatznummer102107
FachzeitschriftApplied physics letters
Jahrgang95
Ausgabenummer10
PublikationsstatusVeröffentlicht - 7 Sept. 2009

Abstract

Silicon nanocrystals embedded in a lattice-matched Gd2 O 3 matrix exhibit large size-dependent bandgap widening. Measurements of photocharging spectra of these crystals indicate only a marginal variation in the photoionization threshold energy. The latter suggests that most of the confinement-induced bandgap width variation is caused by the upward shift of the Si nanocrystal conduction band bottom.

ASJC Scopus Sachgebiete

Zitieren

Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3. / Afanas'ev, V. V.; Badylevich, M.; Stesmans, A. et al.
in: Applied physics letters, Jahrgang 95, Nr. 10, 102107, 07.09.2009.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Afanas'ev, VV, Badylevich, M, Stesmans, A, Laha, A, Osten, HJ & Fissel, A 2009, 'Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3', Applied physics letters, Jg. 95, Nr. 10, 102107. https://doi.org/10.1063/1.3204019
Afanas'ev, V. V., Badylevich, M., Stesmans, A., Laha, A., Osten, H. J., & Fissel, A. (2009). Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3. Applied physics letters, 95(10), Artikel 102107. https://doi.org/10.1063/1.3204019
Afanas'ev VV, Badylevich M, Stesmans A, Laha A, Osten HJ, Fissel A. Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3. Applied physics letters. 2009 Sep 7;95(10):102107. doi: 10.1063/1.3204019
Afanas'ev, V. V. ; Badylevich, M. ; Stesmans, A. et al. / Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3. in: Applied physics letters. 2009 ; Jahrgang 95, Nr. 10.
Download
@article{6469bc361be24c2a96746f72c1ac0a37,
title = "Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3",
abstract = "Silicon nanocrystals embedded in a lattice-matched Gd2 O 3 matrix exhibit large size-dependent bandgap widening. Measurements of photocharging spectra of these crystals indicate only a marginal variation in the photoionization threshold energy. The latter suggests that most of the confinement-induced bandgap width variation is caused by the upward shift of the Si nanocrystal conduction band bottom.",
author = "Afanas'ev, {V. V.} and M. Badylevich and A. Stesmans and A. Laha and Osten, {H. J.} and A. Fissel",
year = "2009",
month = sep,
day = "7",
doi = "10.1063/1.3204019",
language = "English",
volume = "95",
journal = "Applied physics letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "10",

}

Download

TY - JOUR

T1 - Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3

AU - Afanas'ev, V. V.

AU - Badylevich, M.

AU - Stesmans, A.

AU - Laha, A.

AU - Osten, H. J.

AU - Fissel, A.

PY - 2009/9/7

Y1 - 2009/9/7

N2 - Silicon nanocrystals embedded in a lattice-matched Gd2 O 3 matrix exhibit large size-dependent bandgap widening. Measurements of photocharging spectra of these crystals indicate only a marginal variation in the photoionization threshold energy. The latter suggests that most of the confinement-induced bandgap width variation is caused by the upward shift of the Si nanocrystal conduction band bottom.

AB - Silicon nanocrystals embedded in a lattice-matched Gd2 O 3 matrix exhibit large size-dependent bandgap widening. Measurements of photocharging spectra of these crystals indicate only a marginal variation in the photoionization threshold energy. The latter suggests that most of the confinement-induced bandgap width variation is caused by the upward shift of the Si nanocrystal conduction band bottom.

UR - http://www.scopus.com/inward/record.url?scp=70249131791&partnerID=8YFLogxK

U2 - 10.1063/1.3204019

DO - 10.1063/1.3204019

M3 - Article

AN - SCOPUS:70249131791

VL - 95

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 10

M1 - 102107

ER -