Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | L41-L43 |
| Fachzeitschrift | Semiconductor Science and Technology |
| Jahrgang | 14 |
| Ausgabenummer | 11 |
| Publikationsstatus | Veröffentlicht - 1 Nov. 1999 |
Abstract
Tunnelling experiments through GaAs-AlAs-GaAs structures with InAs embedded in the AlAs barrier show steps in the current-voltage characteristics which we assign to single-electron tunnelling through self-assembled InAs quantum dots between two three-dimensional electrodes. From the magnetic field dependence of the onset of the current steps, we determine the lateral extension of the electronic wave function in the dot to 4 nm, corresponding to a dot of 14 nm in diameter. Replica of steps at higher voltages are attributed to tunnelling through charged dots. A similar structural dot size is measured independently by transmission electron microscopy on the same wafer and by atomic force microscopy on control samples with InAs dots on a GaAs or an AlAs surface, respectively.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Semiconductor Science and Technology, Jahrgang 14, Nr. 11, 01.11.1999, S. L41-L43.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Size determination of InAs quantum dots using magneto-tunnelling experiments
AU - Hapke-Wurst, I.
AU - Zeitler, U.
AU - Schumacher, H. W.
AU - Haug, R. J.
AU - Pierz, K.
AU - Ahlers, F. J.
PY - 1999/11/1
Y1 - 1999/11/1
N2 - Tunnelling experiments through GaAs-AlAs-GaAs structures with InAs embedded in the AlAs barrier show steps in the current-voltage characteristics which we assign to single-electron tunnelling through self-assembled InAs quantum dots between two three-dimensional electrodes. From the magnetic field dependence of the onset of the current steps, we determine the lateral extension of the electronic wave function in the dot to 4 nm, corresponding to a dot of 14 nm in diameter. Replica of steps at higher voltages are attributed to tunnelling through charged dots. A similar structural dot size is measured independently by transmission electron microscopy on the same wafer and by atomic force microscopy on control samples with InAs dots on a GaAs or an AlAs surface, respectively.
AB - Tunnelling experiments through GaAs-AlAs-GaAs structures with InAs embedded in the AlAs barrier show steps in the current-voltage characteristics which we assign to single-electron tunnelling through self-assembled InAs quantum dots between two three-dimensional electrodes. From the magnetic field dependence of the onset of the current steps, we determine the lateral extension of the electronic wave function in the dot to 4 nm, corresponding to a dot of 14 nm in diameter. Replica of steps at higher voltages are attributed to tunnelling through charged dots. A similar structural dot size is measured independently by transmission electron microscopy on the same wafer and by atomic force microscopy on control samples with InAs dots on a GaAs or an AlAs surface, respectively.
UR - http://www.scopus.com/inward/record.url?scp=0033335107&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/14/11/104
DO - 10.1088/0268-1242/14/11/104
M3 - Article
AN - SCOPUS:0033335107
VL - 14
SP - L41-L43
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 11
ER -