Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Autoren

  • D. Knoll
  • B. Heinemann
  • H. J. Osten
  • K. E. Ehwald
  • B. Tillack
  • P. Schley
  • R. Barth
  • M. Matthes
  • Kwang Soo Park
  • Young Kim
  • W. Winkler

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)703-706
Seitenumfang4
FachzeitschriftTechnical Digest - International Electron Devices Meeting
PublikationsstatusVeröffentlicht - 1998
Extern publiziertJa
Veranstaltung1998 IEEE International Electron Devices Meeting - San Francisco, USA / Vereinigte Staaten
Dauer: 6 Dez. 1998 → 9 Dez. 1998

Abstract

We describe the high-frequency and DC performance of HBTs with LPCVD-grown epitaxial SiGe:C base layers. The devices were fabricated in an epi-free well, single-polysilicon technology. The HBTs show peak fT (fmax) values up to 65 (90) GHz, and ring oscillator delays down to 16 ps. Excellent static parameters like (IB-driven) Early voltage-current gain products of >20 000 V are also demonstrated.

ASJC Scopus Sachgebiete

Zitieren

Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology. / Knoll, D.; Heinemann, B.; Osten, H. J. et al.
in: Technical Digest - International Electron Devices Meeting, 1998, S. 703-706.

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Knoll, D, Heinemann, B, Osten, HJ, Ehwald, KE, Tillack, B, Schley, P, Barth, R, Matthes, M, Park, KS, Kim, Y & Winkler, W 1998, 'Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology', Technical Digest - International Electron Devices Meeting, S. 703-706.
Knoll, D., Heinemann, B., Osten, H. J., Ehwald, K. E., Tillack, B., Schley, P., Barth, R., Matthes, M., Park, K. S., Kim, Y., & Winkler, W. (1998). Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology. Technical Digest - International Electron Devices Meeting, 703-706.
Knoll D, Heinemann B, Osten HJ, Ehwald KE, Tillack B, Schley P et al. Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology. Technical Digest - International Electron Devices Meeting. 1998;703-706.
Knoll, D. ; Heinemann, B. ; Osten, H. J. et al. / Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology. in: Technical Digest - International Electron Devices Meeting. 1998 ; S. 703-706.
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abstract = "We describe the high-frequency and DC performance of HBTs with LPCVD-grown epitaxial SiGe:C base layers. The devices were fabricated in an epi-free well, single-polysilicon technology. The HBTs show peak fT (fmax) values up to 65 (90) GHz, and ring oscillator delays down to 16 ps. Excellent static parameters like (IB-driven) Early voltage-current gain products of >20 000 V are also demonstrated.",
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Download

TY - JOUR

T1 - Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology

AU - Knoll, D.

AU - Heinemann, B.

AU - Osten, H. J.

AU - Ehwald, K. E.

AU - Tillack, B.

AU - Schley, P.

AU - Barth, R.

AU - Matthes, M.

AU - Park, Kwang Soo

AU - Kim, Young

AU - Winkler, W.

PY - 1998

Y1 - 1998

N2 - We describe the high-frequency and DC performance of HBTs with LPCVD-grown epitaxial SiGe:C base layers. The devices were fabricated in an epi-free well, single-polysilicon technology. The HBTs show peak fT (fmax) values up to 65 (90) GHz, and ring oscillator delays down to 16 ps. Excellent static parameters like (IB-driven) Early voltage-current gain products of >20 000 V are also demonstrated.

AB - We describe the high-frequency and DC performance of HBTs with LPCVD-grown epitaxial SiGe:C base layers. The devices were fabricated in an epi-free well, single-polysilicon technology. The HBTs show peak fT (fmax) values up to 65 (90) GHz, and ring oscillator delays down to 16 ps. Excellent static parameters like (IB-driven) Early voltage-current gain products of >20 000 V are also demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0032276830&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032276830

SP - 703

EP - 706

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - 1998 IEEE International Electron Devices Meeting

Y2 - 6 December 1998 through 9 December 1998

ER -