Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 021 |
| Seiten (von - bis) | 877-880 |
| Seitenumfang | 4 |
| Fachzeitschrift | Semiconductor Science and Technology |
| Jahrgang | 10 |
| Ausgabenummer | 6 |
| Publikationsstatus | Veröffentlicht - 1 Dez. 1995 |
| Extern publiziert | Ja |
Abstract
The asymmetry of the current-voltage characteristic of a single-electron tunnelling transistor causes a current rectification when applying a low-frequency voltage signal. The polarity of the direct current depends on the voltage applied to a gate electrode. The characteristic change in current polarity with increasing gate voltage can be used to detect a difference in the low frequency excitation, and also the high frequency excitation of the two electron reservoirs coupled to the electronic island.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Semiconductor Science and Technology, Jahrgang 10, Nr. 6, 021, 01.12.1995, S. 877-880.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Single-electron tunnelling transistor as a current rectifier with potential-controlled current polarity
AU - Weis, J.
AU - Haug, R. J.
AU - Von Klitzing, K.
AU - Ploog, K.
PY - 1995/12/1
Y1 - 1995/12/1
N2 - The asymmetry of the current-voltage characteristic of a single-electron tunnelling transistor causes a current rectification when applying a low-frequency voltage signal. The polarity of the direct current depends on the voltage applied to a gate electrode. The characteristic change in current polarity with increasing gate voltage can be used to detect a difference in the low frequency excitation, and also the high frequency excitation of the two electron reservoirs coupled to the electronic island.
AB - The asymmetry of the current-voltage characteristic of a single-electron tunnelling transistor causes a current rectification when applying a low-frequency voltage signal. The polarity of the direct current depends on the voltage applied to a gate electrode. The characteristic change in current polarity with increasing gate voltage can be used to detect a difference in the low frequency excitation, and also the high frequency excitation of the two electron reservoirs coupled to the electronic island.
UR - http://www.scopus.com/inward/record.url?scp=0029324504&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/10/6/021
DO - 10.1088/0268-1242/10/6/021
M3 - Article
AN - SCOPUS:0029324504
VL - 10
SP - 877
EP - 880
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 6
M1 - 021
ER -