Single-electron tunneling through a double quantum dot: The artificial molecule

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autorschaft

  • R. Blick
  • R. Haug
  • J. Weis
  • D. Pfannkuche

Externe Organisationen

  • Max-Planck-Institut für Festkörperforschung
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Details

OriginalspracheEnglisch
Seiten (von - bis)7899-7902
Seitenumfang4
FachzeitschriftPhysical Review B - Condensed Matter and Materials Physics
Jahrgang53
Ausgabenummer12
PublikationsstatusVeröffentlicht - 1 Jan. 1996
Extern publiziertJa

Abstract

Single-electron tunneling through two coupled quantum dots is strongly influenced by the electrostatic interaction between the dots. At low temperatures, we observe the formation of a molecularlike state in the double-dot system. The dots are defined by split gates in an (Formula presented)(Formula presented)As-GaAs heterostructure. They are of different size and coupled in series, leading to two different charging energies. In the linear transport regime we find the charging diagram for the double quantum dot. This diagram exhibits the operation points of the system to be employed as an electron pump.

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Single-electron tunneling through a double quantum dot: The artificial molecule. / Blick, R.; Haug, R.; Weis, J. et al.
in: Physical Review B - Condensed Matter and Materials Physics, Jahrgang 53, Nr. 12, 01.01.1996, S. 7899-7902.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Blick R, Haug R, Weis J, Pfannkuche D, Klitzing K, Eberl K. Single-electron tunneling through a double quantum dot: The artificial molecule. Physical Review B - Condensed Matter and Materials Physics. 1996 Jan 1;53(12):7899-7902. doi: 10.1103/PhysRevB.53.7899
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