Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | High magnetic fields in the physics of semiconductors |
| Seiten | 456-463 |
| Publikationsstatus | Veröffentlicht - 1995 |
| Extern publiziert | Ja |
| Veranstaltung | 11th International Conference on High Magnetic Fields in the Physics of Semiconductors - Massachusetts Institute of Technology, Cambridge, USA / Vereinigte Staaten Dauer: 8 Aug. 1994 → 12 Aug. 1994 Konferenznummer: 11 |
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Single-electron tunneling in quantum dot systems. / Haug, R.J.
High magnetic fields in the physics of semiconductors. 1995. S. 456-463.
High magnetic fields in the physics of semiconductors. 1995. S. 456-463.
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung
Haug, RJ 1995, Single-electron tunneling in quantum dot systems. in High magnetic fields in the physics of semiconductors. S. 456-463, 11th International Conference on High Magnetic Fields in the Physics of Semiconductors, Cambridge, Massachusetts, USA / Vereinigte Staaten, 8 Aug. 1994.
Haug, R. J. (1995). Single-electron tunneling in quantum dot systems. In High magnetic fields in the physics of semiconductors (S. 456-463)
Haug RJ. Single-electron tunneling in quantum dot systems. in High magnetic fields in the physics of semiconductors. 1995. S. 456-463
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