Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 82-86 |
| Seitenumfang | 5 |
| Fachzeitschrift | Physica B: Condensed Matter |
| Jahrgang | 227 |
| Ausgabenummer | 1-4 |
| Publikationsstatus | Veröffentlicht - Sept. 1996 |
| Extern publiziert | Ja |
Abstract
Single-electron transistors can be fabricated in AlGaAs/GaAs heterostructures in different ways. Besides conventional ways to produce lateral and vertical tunneling structures the overgrowth of patterned substrates is presented as a new method to obtain complete transistors. Single-electron tunneling through single and coupled quantum dots is shown and the possibilities of doing spectroscopy of electronic states are discussed.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Physica B: Condensed Matter, Jahrgang 227, Nr. 1-4, 09.1996, S. 82-86.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Single-electron transistors with quantum dots
AU - Haug, R. J.
AU - Dilger, M.
AU - Schmidt, T.
AU - Blick, R. H.
AU - Klitzing, K. V.
AU - Eberl, K.
N1 - Funding information: Discussions with V. Falko and D. Pfannkuche, and samples supplied by A. F6rster and H. Liith are gratefully acknowledged. Part of this work has been supported by the Bundesministerium ffir Bil dung, Wissenschaft, Forschung und Technologie.
PY - 1996/9
Y1 - 1996/9
N2 - Single-electron transistors can be fabricated in AlGaAs/GaAs heterostructures in different ways. Besides conventional ways to produce lateral and vertical tunneling structures the overgrowth of patterned substrates is presented as a new method to obtain complete transistors. Single-electron tunneling through single and coupled quantum dots is shown and the possibilities of doing spectroscopy of electronic states are discussed.
AB - Single-electron transistors can be fabricated in AlGaAs/GaAs heterostructures in different ways. Besides conventional ways to produce lateral and vertical tunneling structures the overgrowth of patterned substrates is presented as a new method to obtain complete transistors. Single-electron tunneling through single and coupled quantum dots is shown and the possibilities of doing spectroscopy of electronic states are discussed.
KW - Quantum dots
KW - Single-electron tunneling
KW - Spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=0030234118&partnerID=8YFLogxK
U2 - 10.1016/0921-4526(96)00356-0
DO - 10.1016/0921-4526(96)00356-0
M3 - Article
AN - SCOPUS:0030234118
VL - 227
SP - 82
EP - 86
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - 1-4
ER -