Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1493-1497 |
| Seitenumfang | 5 |
| Fachzeitschrift | Semiconductor Science and Technology |
| Jahrgang | 11 |
| Ausgabenummer | 11 SUPPL. S |
| Publikationsstatus | Veröffentlicht - Nov. 1996 |
| Extern publiziert | Ja |
Abstract
Single-electron transistors with a self-assembled quantum dot are fabricated by direct epitaxial growth on patterned substrates. A self-assembled quantum dot is formed during the deposition of an AlxGa1-xAs/GaAs heterostructure on a bow-tie-shaped constriction, pre-patterned on a GaAs substrate. The self-assembled quantum dot is located in the centre of the constriction and is coupled via tunnelling barriers, also fabricated within the same growth process, to electrical leads. The fabricated devices allow switching with single electrons up to temperatures of 6 K by applying a voltage to an in-plane gate, which is also fabricated during the epitaxial growth. The structure of the devices is also characterized using scanning-electron and atomic-force microscopy.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Semiconductor Science and Technology, Jahrgang 11, Nr. 11 SUPPL. S, 11.1996, S. 1493-1497.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Single-electron transistors with a self-assembled quantum dot
AU - Dilger, M.
AU - Haug, R. J.
AU - Eberl, K.
AU - Von Klitzing, K.
PY - 1996/11
Y1 - 1996/11
N2 - Single-electron transistors with a self-assembled quantum dot are fabricated by direct epitaxial growth on patterned substrates. A self-assembled quantum dot is formed during the deposition of an AlxGa1-xAs/GaAs heterostructure on a bow-tie-shaped constriction, pre-patterned on a GaAs substrate. The self-assembled quantum dot is located in the centre of the constriction and is coupled via tunnelling barriers, also fabricated within the same growth process, to electrical leads. The fabricated devices allow switching with single electrons up to temperatures of 6 K by applying a voltage to an in-plane gate, which is also fabricated during the epitaxial growth. The structure of the devices is also characterized using scanning-electron and atomic-force microscopy.
AB - Single-electron transistors with a self-assembled quantum dot are fabricated by direct epitaxial growth on patterned substrates. A self-assembled quantum dot is formed during the deposition of an AlxGa1-xAs/GaAs heterostructure on a bow-tie-shaped constriction, pre-patterned on a GaAs substrate. The self-assembled quantum dot is located in the centre of the constriction and is coupled via tunnelling barriers, also fabricated within the same growth process, to electrical leads. The fabricated devices allow switching with single electrons up to temperatures of 6 K by applying a voltage to an in-plane gate, which is also fabricated during the epitaxial growth. The structure of the devices is also characterized using scanning-electron and atomic-force microscopy.
UR - http://www.scopus.com/inward/record.url?scp=0030284201&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/11/11S/006
DO - 10.1088/0268-1242/11/11S/006
M3 - Article
AN - SCOPUS:0030284201
VL - 11
SP - 1493
EP - 1497
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 11 SUPPL. S
ER -