Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 995-999 |
| Seitenumfang | 5 |
| Fachzeitschrift | Solid state electronics |
| Jahrgang | 37 |
| Ausgabenummer | 4-6 |
| Publikationsstatus | Veröffentlicht - 1 Jan. 1994 |
| Extern publiziert | Ja |
Abstract
Using the two-dimensional electron gas (2DEG) in an AlGaAs/GaAs heterostructure the zero-dimensional system necessary for the observation of charging effects (single-electron effects) can either be realized by etching trenches and using the in-plane-gate technology or by depleting the 2DEG with the help of gate structures evaporated on top of the heterostructure. In such structures single-electron effects are studied in dependence of the applied gate voltages, the source-drain voltage and the magnetic field. The advantages and disadvantages of the different structures are discussed.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Solid state electronics, Jahrgang 37, Nr. 4-6, 01.01.1994, S. 995-999.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Single-electron transistors realized in in-plane-gate and top-gate technology
AU - Haug, R. J.
AU - Pothier, H.
AU - Weis, J.
AU - v. Klitzing, K.
AU - Ploog, K.
N1 - Funding information: Part of the work has been supported by the Bundesministerium fiir Forschung und Technolo-gie. H.P. is under contract SC-915165 of the European Community.
PY - 1994/1/1
Y1 - 1994/1/1
N2 - Using the two-dimensional electron gas (2DEG) in an AlGaAs/GaAs heterostructure the zero-dimensional system necessary for the observation of charging effects (single-electron effects) can either be realized by etching trenches and using the in-plane-gate technology or by depleting the 2DEG with the help of gate structures evaporated on top of the heterostructure. In such structures single-electron effects are studied in dependence of the applied gate voltages, the source-drain voltage and the magnetic field. The advantages and disadvantages of the different structures are discussed.
AB - Using the two-dimensional electron gas (2DEG) in an AlGaAs/GaAs heterostructure the zero-dimensional system necessary for the observation of charging effects (single-electron effects) can either be realized by etching trenches and using the in-plane-gate technology or by depleting the 2DEG with the help of gate structures evaporated on top of the heterostructure. In such structures single-electron effects are studied in dependence of the applied gate voltages, the source-drain voltage and the magnetic field. The advantages and disadvantages of the different structures are discussed.
UR - http://www.scopus.com/inward/record.url?scp=0028407385&partnerID=8YFLogxK
U2 - 10.1016/0038-1101(94)90344-1
DO - 10.1016/0038-1101(94)90344-1
M3 - Article
AN - SCOPUS:0028407385
VL - 37
SP - 995
EP - 999
JO - Solid state electronics
JF - Solid state electronics
SN - 0038-1101
IS - 4-6
ER -