Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1982-1984 |
| Seitenumfang | 3 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 73 |
| Ausgabenummer | 14 |
| Publikationsstatus | Veröffentlicht - 1 Dez. 1998 |
| Extern publiziert | Ja |
Abstract
We fabricated laterally confined GaAs-AlGaAs superlattices with diameters between 500 nm and 2 μm. With decreasing device diameter, a gap evolves in the current-voltage curve around zero bias and steps show up at the onset of the current. This behavior is interpreted in terms of Coulomb blockade, a depletion of the center of the superlattice, and single-electron tunneling through donor levels.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 73, Nr. 14, 01.12.1998, S. 1982-1984.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Single-electron effects in slim semiconductor superlattices
AU - Schmidt, T.
AU - Haug, R. J.
AU - V. Klitzing, K.
AU - Eberl, K.
PY - 1998/12/1
Y1 - 1998/12/1
N2 - We fabricated laterally confined GaAs-AlGaAs superlattices with diameters between 500 nm and 2 μm. With decreasing device diameter, a gap evolves in the current-voltage curve around zero bias and steps show up at the onset of the current. This behavior is interpreted in terms of Coulomb blockade, a depletion of the center of the superlattice, and single-electron tunneling through donor levels.
AB - We fabricated laterally confined GaAs-AlGaAs superlattices with diameters between 500 nm and 2 μm. With decreasing device diameter, a gap evolves in the current-voltage curve around zero bias and steps show up at the onset of the current. This behavior is interpreted in terms of Coulomb blockade, a depletion of the center of the superlattice, and single-electron tunneling through donor levels.
UR - http://www.scopus.com/inward/record.url?scp=0242421247&partnerID=8YFLogxK
U2 - 10.1063/1.122342
DO - 10.1063/1.122342
M3 - Article
AN - SCOPUS:0242421247
VL - 73
SP - 1982
EP - 1984
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 14
ER -