Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • A. Fissel
  • R. Dargis
  • E. Bugiel
  • D. Schwendt
  • T. Wietler
  • J. Krügener
  • A. Laha
  • H. J. Osten
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Details

OriginalspracheEnglisch
Seiten (von - bis)2546-2550
Seitenumfang5
FachzeitschriftTHIN SOLID FILMS
Jahrgang518
Ausgabenummer9
PublikationsstatusVeröffentlicht - 26 Feb. 2010

Abstract

We investigate molecular beam epitaxial overgrowth of Si template layers produced by different approaches on single-crystalline oxide grown on Si(111). Three approaches based on modified solid-phase epitaxy were found to be suitable for the subsequent Si epitaxial overgrowth. The crystalline quality and interface properties of single-crystalline silicon on single-crystalline oxide grown on Si(111) make the obtained structures suitable for silicon-on-insulator applications. First measurements of electrical properties of p-type samples indicate good electrical properties of the top Si layer. Supplemental investigations demonstrate that Si layers with thickness in the range of 10 nm remain stable during thermal annealing up to 900 °C in an ultra-high vacuum.

ASJC Scopus Sachgebiete

Zitieren

Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy. / Fissel, A.; Dargis, R.; Bugiel, E. et al.
in: THIN SOLID FILMS, Jahrgang 518, Nr. 9, 26.02.2010, S. 2546-2550.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Fissel, A, Dargis, R, Bugiel, E, Schwendt, D, Wietler, T, Krügener, J, Laha, A & Osten, HJ 2010, 'Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy', THIN SOLID FILMS, Jg. 518, Nr. 9, S. 2546-2550. https://doi.org/10.1016/j.tsf.2009.09.139
Fissel, A., Dargis, R., Bugiel, E., Schwendt, D., Wietler, T., Krügener, J., Laha, A., & Osten, H. J. (2010). Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy. THIN SOLID FILMS, 518(9), 2546-2550. https://doi.org/10.1016/j.tsf.2009.09.139
Fissel A, Dargis R, Bugiel E, Schwendt D, Wietler T, Krügener J et al. Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy. THIN SOLID FILMS. 2010 Feb 26;518(9):2546-2550. doi: 10.1016/j.tsf.2009.09.139
Fissel, A. ; Dargis, R. ; Bugiel, E. et al. / Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy. in: THIN SOLID FILMS. 2010 ; Jahrgang 518, Nr. 9. S. 2546-2550.
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AU - Fissel, A.

AU - Dargis, R.

AU - Bugiel, E.

AU - Schwendt, D.

AU - Wietler, T.

AU - Krügener, J.

AU - Laha, A.

AU - Osten, H. J.

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N2 - We investigate molecular beam epitaxial overgrowth of Si template layers produced by different approaches on single-crystalline oxide grown on Si(111). Three approaches based on modified solid-phase epitaxy were found to be suitable for the subsequent Si epitaxial overgrowth. The crystalline quality and interface properties of single-crystalline silicon on single-crystalline oxide grown on Si(111) make the obtained structures suitable for silicon-on-insulator applications. First measurements of electrical properties of p-type samples indicate good electrical properties of the top Si layer. Supplemental investigations demonstrate that Si layers with thickness in the range of 10 nm remain stable during thermal annealing up to 900 °C in an ultra-high vacuum.

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KW - Silicon-on-insulator

KW - Solid-phase epitaxy

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