Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Noise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007 |
| Seiten | 212-215 |
| Seitenumfang | 4 |
| Publikationsstatus | Veröffentlicht - 1 Dez. 2007 |
| Veranstaltung | 19th International Conference on Noise and Fluctuations, ICNF2007 - Tokyo, Japan Dauer: 9 Sept. 2007 → 14 Sept. 2007 |
Publikationsreihe
| Name | AIP Conference Proceedings |
|---|---|
| Band | 922 |
| ISSN (Print) | 0094-243X |
| ISSN (elektronisch) | 1551-7616 |
Abstract
We have implemented single electron counting for the tunneling current through a quantum dot. This allows us to study in detail the dynamics of transport. For certain settings of the gate and bias voltage we observe bimodal counting statistics which reveal the participation of different dot configurations in the transport process. The lifetime of these configurations is long compared to the mean tunneling times of the electrons.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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Noise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007. 2007. S. 212-215 (AIP Conference Proceedings; Band 922).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Single electron counting statistics for atto-Ampere currents through a semiconductor quantum dot
AU - Hohls, F.
AU - Fricke, C.
AU - Wegscheider, W.
AU - Haug, R. J.
PY - 2007/12/1
Y1 - 2007/12/1
N2 - We have implemented single electron counting for the tunneling current through a quantum dot. This allows us to study in detail the dynamics of transport. For certain settings of the gate and bias voltage we observe bimodal counting statistics which reveal the participation of different dot configurations in the transport process. The lifetime of these configurations is long compared to the mean tunneling times of the electrons.
AB - We have implemented single electron counting for the tunneling current through a quantum dot. This allows us to study in detail the dynamics of transport. For certain settings of the gate and bias voltage we observe bimodal counting statistics which reveal the participation of different dot configurations in the transport process. The lifetime of these configurations is long compared to the mean tunneling times of the electrons.
KW - Counting statistics
KW - Fluctuations
KW - Quantum dot
KW - Single electron counting
UR - http://www.scopus.com/inward/record.url?scp=78650547585&partnerID=8YFLogxK
U2 - 10.1063/1.2759669
DO - 10.1063/1.2759669
M3 - Conference contribution
AN - SCOPUS:78650547585
SN - 9780735404328
T3 - AIP Conference Proceedings
SP - 212
EP - 215
BT - Noise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007
T2 - 19th International Conference on Noise and Fluctuations, ICNF2007
Y2 - 9 September 2007 through 14 September 2007
ER -