Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 2350-2353 |
| Seitenumfang | 4 |
| Fachzeitschrift | Microelectronic engineering |
| Jahrgang | 85 |
| Ausgabenummer | 12 |
| Frühes Online-Datum | 30 Sept. 2008 |
| Publikationsstatus | Veröffentlicht - Dez. 2008 |
Abstract
Using an unconventional approach, single crystalline Si-nanoclusters (Si-NCs) with uniform size and higher density were embedded into epitaxial rare earth oxide with two-dimensional spatial arrangements at a defined distance from the substrate using solid source molecular beam epitaxy (MBE) technique. The incorporated Si-NCs with average size of 5 nm and density of 2 × 1012 cm-2 exhibit charge storage capacity with promising retention (∼107 s) and endurance (105 write/erase cycles) characteristics. The Pt/Gd2O3 (Si-NC)/Si (MOS) basic memory cells with embedded Si-nanoclusters display large programming window (∼1.5-2 V) and fast writing speed. With such properties demonstrated, we believe that the Si-NCs embedded in epitaxial Gd2O3 could be potential candidate for high density nonvolatile memory devices in the future.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Microelectronic engineering, Jahrgang 85, Nr. 12, 12.2008, S. 2350-2353.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Si-nanoclusters embedded into epitaxial rare earth oxides
T2 - Potential candidate for nonvolatile memory applications
AU - Laha, Apurba
AU - Bugiel, E.
AU - Fissel, A.
AU - Osten, H. J.
PY - 2008/12
Y1 - 2008/12
N2 - Using an unconventional approach, single crystalline Si-nanoclusters (Si-NCs) with uniform size and higher density were embedded into epitaxial rare earth oxide with two-dimensional spatial arrangements at a defined distance from the substrate using solid source molecular beam epitaxy (MBE) technique. The incorporated Si-NCs with average size of 5 nm and density of 2 × 1012 cm-2 exhibit charge storage capacity with promising retention (∼107 s) and endurance (105 write/erase cycles) characteristics. The Pt/Gd2O3 (Si-NC)/Si (MOS) basic memory cells with embedded Si-nanoclusters display large programming window (∼1.5-2 V) and fast writing speed. With such properties demonstrated, we believe that the Si-NCs embedded in epitaxial Gd2O3 could be potential candidate for high density nonvolatile memory devices in the future.
AB - Using an unconventional approach, single crystalline Si-nanoclusters (Si-NCs) with uniform size and higher density were embedded into epitaxial rare earth oxide with two-dimensional spatial arrangements at a defined distance from the substrate using solid source molecular beam epitaxy (MBE) technique. The incorporated Si-NCs with average size of 5 nm and density of 2 × 1012 cm-2 exhibit charge storage capacity with promising retention (∼107 s) and endurance (105 write/erase cycles) characteristics. The Pt/Gd2O3 (Si-NC)/Si (MOS) basic memory cells with embedded Si-nanoclusters display large programming window (∼1.5-2 V) and fast writing speed. With such properties demonstrated, we believe that the Si-NCs embedded in epitaxial Gd2O3 could be potential candidate for high density nonvolatile memory devices in the future.
KW - Epitaxial rare earth oxide
KW - MBE
KW - Nonvolatile memory
KW - Si-nanocluster
UR - http://www.scopus.com/inward/record.url?scp=56649124642&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2008.09.030
DO - 10.1016/j.mee.2008.09.030
M3 - Article
AN - SCOPUS:56649124642
VL - 85
SP - 2350
EP - 2353
JO - Microelectronic engineering
JF - Microelectronic engineering
SN - 0167-9317
IS - 12
ER -