Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 022102 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 98 |
| Ausgabenummer | 2 |
| Publikationsstatus | Veröffentlicht - 10 Jan. 2011 |
Abstract
We demonstrate gettering of metal impurities in p-type multicrystalline silicon (mc-Si) wafers by annealing wafers that are surface passivated by double layers of amorphous silicon-based compounds acting as gettering sites. As inner layer we use a phosphorus-doped amorphous silicon-carbon-nitrogen alloy, providing surface passivation and acting as dopant source for the emitter formation during subsequent anneal. The outer layer is silicon nitride with antireflective properties. Anneals are done at 750, 800, and 850 °C for 30 and 60 min. The gettering effect is as good as for a conventional POCl 3 diffusion followed by extended gettering at low temperature, and it is weakly influenced by the temperature step chosen. In the range explored, the sheet resistances of the emitters and the junction depths lay between 3000 to 60 Ω/sq. and 100-300 nm, respectively.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 98, Nr. 2, 022102, 10.01.2011.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Simultaneous gettering and emitter formation in multicrystalline-Si wafers by annealing phosphorus doped amorphous silicon compounds
AU - Ferré, Rafel
AU - Martín, Isidro
AU - Trassl, Roland
AU - Alcubilla, Ramon
AU - Brendel, Rolf
N1 - Funding Information: Authors acknowledge M. Feinäugle and S. Musial for technical support. U.P.C. acknowledges the funding under Contract Nos. TEC 2008-02520 and PSE 120000-2007-7.
PY - 2011/1/10
Y1 - 2011/1/10
N2 - We demonstrate gettering of metal impurities in p-type multicrystalline silicon (mc-Si) wafers by annealing wafers that are surface passivated by double layers of amorphous silicon-based compounds acting as gettering sites. As inner layer we use a phosphorus-doped amorphous silicon-carbon-nitrogen alloy, providing surface passivation and acting as dopant source for the emitter formation during subsequent anneal. The outer layer is silicon nitride with antireflective properties. Anneals are done at 750, 800, and 850 °C for 30 and 60 min. The gettering effect is as good as for a conventional POCl 3 diffusion followed by extended gettering at low temperature, and it is weakly influenced by the temperature step chosen. In the range explored, the sheet resistances of the emitters and the junction depths lay between 3000 to 60 Ω/sq. and 100-300 nm, respectively.
AB - We demonstrate gettering of metal impurities in p-type multicrystalline silicon (mc-Si) wafers by annealing wafers that are surface passivated by double layers of amorphous silicon-based compounds acting as gettering sites. As inner layer we use a phosphorus-doped amorphous silicon-carbon-nitrogen alloy, providing surface passivation and acting as dopant source for the emitter formation during subsequent anneal. The outer layer is silicon nitride with antireflective properties. Anneals are done at 750, 800, and 850 °C for 30 and 60 min. The gettering effect is as good as for a conventional POCl 3 diffusion followed by extended gettering at low temperature, and it is weakly influenced by the temperature step chosen. In the range explored, the sheet resistances of the emitters and the junction depths lay between 3000 to 60 Ω/sq. and 100-300 nm, respectively.
UR - http://www.scopus.com/inward/record.url?scp=78751526964&partnerID=8YFLogxK
U2 - 10.1063/1.3535616
DO - 10.1063/1.3535616
M3 - Article
AN - SCOPUS:78751526964
VL - 98
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 2
M1 - 022102
ER -