Simulation-based prediction of reliability and robustness of interconnect systems for semiconductor applications

M. Ackermann; V. Hein; K. Weide-Zaage

doi:10.1109/ESimE.2012.6191800

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Originalsprache	Englisch
Titel des Sammelwerks	2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012
Publikationsstatus	Veröffentlicht - 2012
Veranstaltung	2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012 - Cascais, Portugal Dauer: 16 Apr. 2012 → 18 Apr. 2012

Publikationsreihe

Name	2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012

Abstract

The article at hand presents the results of thermoelectrical simulations of migration effects in integrated interconnect systems in comparison to measurement data. The simulation concept will be described and the output values as mass flux divergence and time-to-failure (TTF) will be discussed. Based on the example of via chain structures, different geometry factors have been investigated with respect to the impact on the robustness. The simulation can support the reliability prediction and the determination of failure mechanisms in terms of process qualification and design optimization.

ASJC Scopus Sachgebiete

Ingenieurwesen (insg.)
Elektrotechnik und Elektronik
Mathematik (insg.)
Modellierung und Simulation

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Simulation-based prediction of reliability and robustness of interconnect systems for semiconductor applications. / Ackermann, M.; Hein, V.; Weide-Zaage, K.
2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012. 2012. 6191800 (2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Ackermann, M, Hein, V & Weide-Zaage, K 2012, Simulation-based prediction of reliability and robustness of interconnect systems for semiconductor applications. in 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012., 6191800, 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012, 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012, Cascais, Portugal, 16 Apr. 2012. https://doi.org/10.1109/ESimE.2012.6191800

Ackermann, M., Hein, V., & Weide-Zaage, K. (2012). Simulation-based prediction of reliability and robustness of interconnect systems for semiconductor applications. In 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012 Artikel 6191800 (2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012). https://doi.org/10.1109/ESimE.2012.6191800

Ackermann M, Hein V, Weide-Zaage K. Simulation-based prediction of reliability and robustness of interconnect systems for semiconductor applications. in 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012. 2012. 6191800. (2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012). doi: 10.1109/ESimE.2012.6191800

Ackermann, M. ; Hein, V. ; Weide-Zaage, K. / Simulation-based prediction of reliability and robustness of interconnect systems for semiconductor applications. 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012. 2012. (2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012).

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abstract = "The article at hand presents the results of thermoelectrical simulations of migration effects in integrated interconnect systems in comparison to measurement data. The simulation concept will be described and the output values as mass flux divergence and time-to-failure (TTF) will be discussed. Based on the example of via chain structures, different geometry factors have been investigated with respect to the impact on the robustness. The simulation can support the reliability prediction and the determination of failure mechanisms in terms of process qualification and design optimization.",

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author = "M. Ackermann and V. Hein and K. Weide-Zaage",

note = "Copyright: Copyright 2012 Elsevier B.V., All rights reserved.; 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012 ; Conference date: 16-04-2012 Through 18-04-2012",

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AU - Ackermann, M.

AU - Hein, V.

AU - Weide-Zaage, K.

PY - 2012

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AB - The article at hand presents the results of thermoelectrical simulations of migration effects in integrated interconnect systems in comparison to measurement data. The simulation concept will be described and the output values as mass flux divergence and time-to-failure (TTF) will be discussed. Based on the example of via chain structures, different geometry factors have been investigated with respect to the impact on the robustness. The simulation can support the reliability prediction and the determination of failure mechanisms in terms of process qualification and design optimization.

KW - electromigration

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KW - robustness

KW - thermoelectrical simulation

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DO - 10.1109/ESimE.2012.6191800

M3 - Conference contribution

AN - SCOPUS:84861401064

SN - 9781467315128

T3 - 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012

BT - 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012

T2 - 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012

Y2 - 16 April 2012 through 18 April 2012

ER -

Research@Leibniz University

Simulation-based prediction of reliability and robustness of interconnect systems for semiconductor applications

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