Simulation of traveling interface pulses in bistable surface reactions

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autorschaft

  • Alexei Makeev
  • Ronald Imbihl

Externe Organisationen

  • Lomonosov Moscow State University
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Details

OriginalspracheEnglisch
Aufsatznummer042206
Seitenumfang9
FachzeitschriftPhysical Review E
Jahrgang100
Ausgabenummer4
PublikationsstatusVeröffentlicht - 7 Okt. 2019

Abstract

A couple of bistable oxidation reactions on Rh(110), the CH3OH+O2 and the NH3+O2 reactions, exhibit localized excitations at the interface between oxygen-poor and oxygen-rich phase that propagate in a pulselike manner along the interface. A three-variable reaction-diffusion model is set up based on a mechanism that explains the localized excitations as being caused by temporary structural defects generated in the vicinity of the interface. The structural defects are a consequence of different densities of surface atoms in the oxygen-induced reconstruction phases and in the nonreconstructed (1×1) phase. One- and two-dimensional simulations show that traveling interface pulses (TIPs) exist in a region of so-called double metastability adjacent to the equistability point of the bistable system. As in the experiment, we observe triangular-shaped TIPs that move fast along the interface. Diffusional anisotropy is not required for the occurrence of TIPs. All essential features of the experiment are reproduced by the simulations.

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Simulation of traveling interface pulses in bistable surface reactions. / Makeev, Alexei; Imbihl, Ronald.
in: Physical Review E, Jahrgang 100, Nr. 4, 042206, 07.10.2019.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Makeev A, Imbihl R. Simulation of traveling interface pulses in bistable surface reactions. Physical Review E. 2019 Okt 7;100(4):042206. doi: 10.1103/PhysRevE.100.042206
Makeev, Alexei ; Imbihl, Ronald. / Simulation of traveling interface pulses in bistable surface reactions. in: Physical Review E. 2019 ; Jahrgang 100, Nr. 4.
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