Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems |
| Untertitel | EuroSimE |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| Seitenumfang | 4 |
| ISBN (elektronisch) | 9798350393637 |
| ISBN (Print) | 979-8-3503-9364-4 |
| Publikationsstatus | Veröffentlicht - 2024 |
| Veranstaltung | 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2024 - Catania, Italien Dauer: 7 Apr. 2024 → 10 Apr. 2024 |
Abstract
The simulation tool GEANT4 is used for the simulation of particle interaction under radiation exposure. In this investigation the tool is used to calculate the interaction of neutrons in the SRAM cells in the active means transistor region of the cells. The goal is to determine the sensitivity to bit flips. The determination of the linear energy transfer (LET) depending on the count of transistors and cell size was investigated. The investigated SRAM-cells were fabricated in a 180nm node. The neutron radiation energy which may lead to a single event upset (SEU) was determined. The simulation was carried out with different particle energies of 1.6MeV, 2.45MeV, 6MeV and 14MeV. Threshold energies are necessary to initiate a bit flip. With the help of the simulation, the energy transfer into the active region can be determined. As a result, the adaptation of measurement (radiation time and dose) can be done.
ASJC Scopus Sachgebiete
- Chemische Verfahrenstechnik (insg.)
- Fließ- und Transferprozesse von Flüssigkeiten
- Ingenieurwesen (insg.)
- Numerische Mechanik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Ingenieurwesen (insg.)
- Sicherheit, Risiko, Zuverlässigkeit und Qualität
- Werkstoffwissenschaften (insg.)
- Keramische und Verbundwerkstoffe
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Mathematik (insg.)
- Modellierung und Simulation
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2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems: EuroSimE . Institute of Electrical and Electronics Engineers Inc., 2024.
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Simulation of Different SRAM Cells under Neutron Radiation with GEANT4
AU - Weide-Zaage, Kirsten
AU - Mandala, Satria Jaya
AU - Trumann, Eike
AU - Paya-Vaya, Guillermo
AU - Wolff, Dorian Von
AU - Bausen, Andre
AU - Muller, Alexander
N1 - Publisher Copyright: © 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - The simulation tool GEANT4 is used for the simulation of particle interaction under radiation exposure. In this investigation the tool is used to calculate the interaction of neutrons in the SRAM cells in the active means transistor region of the cells. The goal is to determine the sensitivity to bit flips. The determination of the linear energy transfer (LET) depending on the count of transistors and cell size was investigated. The investigated SRAM-cells were fabricated in a 180nm node. The neutron radiation energy which may lead to a single event upset (SEU) was determined. The simulation was carried out with different particle energies of 1.6MeV, 2.45MeV, 6MeV and 14MeV. Threshold energies are necessary to initiate a bit flip. With the help of the simulation, the energy transfer into the active region can be determined. As a result, the adaptation of measurement (radiation time and dose) can be done.
AB - The simulation tool GEANT4 is used for the simulation of particle interaction under radiation exposure. In this investigation the tool is used to calculate the interaction of neutrons in the SRAM cells in the active means transistor region of the cells. The goal is to determine the sensitivity to bit flips. The determination of the linear energy transfer (LET) depending on the count of transistors and cell size was investigated. The investigated SRAM-cells were fabricated in a 180nm node. The neutron radiation energy which may lead to a single event upset (SEU) was determined. The simulation was carried out with different particle energies of 1.6MeV, 2.45MeV, 6MeV and 14MeV. Threshold energies are necessary to initiate a bit flip. With the help of the simulation, the energy transfer into the active region can be determined. As a result, the adaptation of measurement (radiation time and dose) can be done.
UR - http://www.scopus.com/inward/record.url?scp=85191171161&partnerID=8YFLogxK
U2 - 10.1109/EuroSimE60745.2024.10491490
DO - 10.1109/EuroSimE60745.2024.10491490
M3 - Conference contribution
AN - SCOPUS:85191171161
SN - 979-8-3503-9364-4
BT - 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2024
Y2 - 7 April 2024 through 10 April 2024
ER -