Simplified Monte Carlo simulations of point defects during industrial silicon crystal growth

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Autoren

  • A. Muiznieks
  • I. Madzulis
  • K. Dadzis
  • K. Lacis
  • Th Wetzel

Organisationseinheiten

Externe Organisationen

  • University of Latvia
  • Siltronic AG
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)117-125
Seitenumfang9
FachzeitschriftJournal of crystal growth
Jahrgang266
Ausgabenummer1-3
Frühes Online-Datum28 März 2004
PublikationsstatusVeröffentlicht - 15 Mai 2004
VeranstaltungFourth International Workshop on Modeling - Kyushu, Japan
Dauer: 4 Nov. 20037 Nov. 2003

Abstract

The paper proposes Monte-Carlo method-based 2D and 3D models of vacancies and interstitials in a cubic crystal. The model exploits the concept of lattice gas with covalent bounds between neighbour nodes. Two lattices shifted by half-period serve as nodes for atoms of the main crystal and interstitials. Distribution of particles between both lattices characterizes the entropy of the crystal. Successfully chosen interaction energies between main and sub-lattices allows the authors to detect a phase transition solid-liquid as well as to study the production of crystal defects/their agglomeration as a function of cooling/heating rate. Although the introduced 3D modification of the model contains several rough assumptions, this gives all results of the 2D case as well as reflects some 3D specificities. All the results obtained agree qualitatively with experimental observations on crystals.

ASJC Scopus Sachgebiete

Zitieren

Simplified Monte Carlo simulations of point defects during industrial silicon crystal growth. / Muiznieks, A.; Madzulis, I.; Dadzis, K. et al.
in: Journal of crystal growth, Jahrgang 266, Nr. 1-3, 15.05.2004, S. 117-125.

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Muiznieks A, Madzulis I, Dadzis K, Lacis K, Wetzel T. Simplified Monte Carlo simulations of point defects during industrial silicon crystal growth. Journal of crystal growth. 2004 Mai 15;266(1-3):117-125. Epub 2004 Mär 28. doi: 10.1016/j.jcrysgro.2004.02.037
Muiznieks, A. ; Madzulis, I. ; Dadzis, K. et al. / Simplified Monte Carlo simulations of point defects during industrial silicon crystal growth. in: Journal of crystal growth. 2004 ; Jahrgang 266, Nr. 1-3. S. 117-125.
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T1 - Simplified Monte Carlo simulations of point defects during industrial silicon crystal growth

AU - Muiznieks, A.

AU - Madzulis, I.

AU - Dadzis, K.

AU - Lacis, K.

AU - Wetzel, Th

N1 - Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2004/5/15

Y1 - 2004/5/15

N2 - The paper proposes Monte-Carlo method-based 2D and 3D models of vacancies and interstitials in a cubic crystal. The model exploits the concept of lattice gas with covalent bounds between neighbour nodes. Two lattices shifted by half-period serve as nodes for atoms of the main crystal and interstitials. Distribution of particles between both lattices characterizes the entropy of the crystal. Successfully chosen interaction energies between main and sub-lattices allows the authors to detect a phase transition solid-liquid as well as to study the production of crystal defects/their agglomeration as a function of cooling/heating rate. Although the introduced 3D modification of the model contains several rough assumptions, this gives all results of the 2D case as well as reflects some 3D specificities. All the results obtained agree qualitatively with experimental observations on crystals.

AB - The paper proposes Monte-Carlo method-based 2D and 3D models of vacancies and interstitials in a cubic crystal. The model exploits the concept of lattice gas with covalent bounds between neighbour nodes. Two lattices shifted by half-period serve as nodes for atoms of the main crystal and interstitials. Distribution of particles between both lattices characterizes the entropy of the crystal. Successfully chosen interaction energies between main and sub-lattices allows the authors to detect a phase transition solid-liquid as well as to study the production of crystal defects/their agglomeration as a function of cooling/heating rate. Although the introduced 3D modification of the model contains several rough assumptions, this gives all results of the 2D case as well as reflects some 3D specificities. All the results obtained agree qualitatively with experimental observations on crystals.

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KW - A1. Defects

KW - A1. Point defects

KW - A2. Single crystal growth

KW - B1. Silicon

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