Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XIX |
| Herausgeber (Verlag) | SPIE |
| ISBN (Print) | 9780819498809 |
| Publikationsstatus | Veröffentlicht - 6 März 2014 |
| Veranstaltung | Laser applications in microelectronic and optoelectronic manufacturing (LAMOM) XIX - San Francisco, USA / Vereinigte Staaten Dauer: 3 Feb. 2014 → 6 Feb. 2014 |
Publikationsreihe
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Band | 8967 |
| ISSN (Print) | 0277-786X |
| ISSN (elektronisch) | 1996-756X |
Abstract
We investigate a laser welding process for contacting aluminum metallized crystalline silicon solar cells to a 10-μm-thick aluminum layers on a glass substrate. The reduction of the solar cell metallization thickness is analyzed with respect to laser induced damage using SiNx passivated silicon wafers. Additionally, we measure the mechanical stress of the laser welds by perpendicular tear-off as well as the electrical contact resistance. We apply two types of laser processes; one uses one to eight 20-ns-laser pulses at 355 nm with fluences between 12 and 40 J/cm2 and the other single 1.2-μs-laser pulses at 1064 nm with 33 to 73 J/cm2. Ns laser pulses can contact down to 1-μm-thick aluminum layers on silicon without inducing laser damage to the silicon and lead to sufficient strong mechanical contact. In case of μs laser pulses the limiting thickness is 2 μm.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Informatik (insg.)
- Angewandte Informatik
- Mathematik (insg.)
- Angewandte Mathematik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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- BibTex
- RIS
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XIX. SPIE, 2014. 896716 (Proceedings of SPIE - The International Society for Optical Engineering; Band 8967).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Silver-free solar cell interconnection by laser spot welding of thin aluminum layers
T2 - Laser applications in microelectronic and optoelectronic manufacturing (LAMOM) XIX
AU - Schulte-Huxel, H.
AU - Blankemeyer, S.
AU - Kajari-Schröder, S.
AU - Brendel, R.
PY - 2014/3/6
Y1 - 2014/3/6
N2 - We investigate a laser welding process for contacting aluminum metallized crystalline silicon solar cells to a 10-μm-thick aluminum layers on a glass substrate. The reduction of the solar cell metallization thickness is analyzed with respect to laser induced damage using SiNx passivated silicon wafers. Additionally, we measure the mechanical stress of the laser welds by perpendicular tear-off as well as the electrical contact resistance. We apply two types of laser processes; one uses one to eight 20-ns-laser pulses at 355 nm with fluences between 12 and 40 J/cm2 and the other single 1.2-μs-laser pulses at 1064 nm with 33 to 73 J/cm2. Ns laser pulses can contact down to 1-μm-thick aluminum layers on silicon without inducing laser damage to the silicon and lead to sufficient strong mechanical contact. In case of μs laser pulses the limiting thickness is 2 μm.
AB - We investigate a laser welding process for contacting aluminum metallized crystalline silicon solar cells to a 10-μm-thick aluminum layers on a glass substrate. The reduction of the solar cell metallization thickness is analyzed with respect to laser induced damage using SiNx passivated silicon wafers. Additionally, we measure the mechanical stress of the laser welds by perpendicular tear-off as well as the electrical contact resistance. We apply two types of laser processes; one uses one to eight 20-ns-laser pulses at 355 nm with fluences between 12 and 40 J/cm2 and the other single 1.2-μs-laser pulses at 1064 nm with 33 to 73 J/cm2. Ns laser pulses can contact down to 1-μm-thick aluminum layers on silicon without inducing laser damage to the silicon and lead to sufficient strong mechanical contact. In case of μs laser pulses the limiting thickness is 2 μm.
KW - Aluminum
KW - Back contact
KW - Laser welding
KW - Photovoltaics
KW - Solar cell
KW - Thin metal films
UR - http://www.scopus.com/inward/record.url?scp=84900514559&partnerID=8YFLogxK
U2 - 10.1117/12.2037628
DO - 10.1117/12.2037628
M3 - Conference contribution
AN - SCOPUS:84900514559
SN - 9780819498809
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XIX
PB - SPIE
Y2 - 3 February 2014 through 6 February 2014
ER -