Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| Seiten | 3074-3078 |
| Seitenumfang | 5 |
| ISBN (Print) | 9781479932993 |
| Publikationsstatus | Veröffentlicht - 20 Feb. 2014 |
| Veranstaltung | 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, USA / Vereinigte Staaten Dauer: 16 Juni 2013 → 21 Juni 2013 |
Publikationsreihe
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
PERC solar cells targeted for industrial mass production mainly apply p-type boron-doped silicon wafers. However, boron-doped wafers are subject to light-induced degradation which can decrease the efficiency during solar cell operation. In this paper, we evaluate Cz and monolike silicon wafer materials with different resistivity and oxygen concentration and their application to high-efficiency PERC solar cells. Test wafer results show that both, lower oxygen concentrations as well as higher resistivity increase the carrier lifetime post LID from 105 μs up to 564 μs. PERC solar cells processed with these wafers achieve efficiencies between 19.9% and 20.2%. The light-induced degradation of the efficiency is reduced from 0.47%abs. for the standard 2 ωcm Cz to around 0.3%abs. for 5 ωcm Cz wafers and low oxygen MCz wafers. The lowest efficiency degradation of 0.17%abs. is obtained for the monolike wafers. The experimental results are in good accordance with 2-dimensional simulations using Sentaurus device taking into account the measured injection dependent minority carrier lifetimes.
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39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2014. S. 3074-3078 6745110 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Silicon wafer material options for highly efficient p-type PERC solar cells
AU - Dullweber, Thorsten
AU - Kranz, Christopher
AU - Baumann, Ulrike
AU - Hesse, Rene
AU - Walter, Dominic
AU - Schmidt, Jan
AU - Altermatt, Pietro
AU - Brendel, Rolf
PY - 2014/2/20
Y1 - 2014/2/20
N2 - PERC solar cells targeted for industrial mass production mainly apply p-type boron-doped silicon wafers. However, boron-doped wafers are subject to light-induced degradation which can decrease the efficiency during solar cell operation. In this paper, we evaluate Cz and monolike silicon wafer materials with different resistivity and oxygen concentration and their application to high-efficiency PERC solar cells. Test wafer results show that both, lower oxygen concentrations as well as higher resistivity increase the carrier lifetime post LID from 105 μs up to 564 μs. PERC solar cells processed with these wafers achieve efficiencies between 19.9% and 20.2%. The light-induced degradation of the efficiency is reduced from 0.47%abs. for the standard 2 ωcm Cz to around 0.3%abs. for 5 ωcm Cz wafers and low oxygen MCz wafers. The lowest efficiency degradation of 0.17%abs. is obtained for the monolike wafers. The experimental results are in good accordance with 2-dimensional simulations using Sentaurus device taking into account the measured injection dependent minority carrier lifetimes.
AB - PERC solar cells targeted for industrial mass production mainly apply p-type boron-doped silicon wafers. However, boron-doped wafers are subject to light-induced degradation which can decrease the efficiency during solar cell operation. In this paper, we evaluate Cz and monolike silicon wafer materials with different resistivity and oxygen concentration and their application to high-efficiency PERC solar cells. Test wafer results show that both, lower oxygen concentrations as well as higher resistivity increase the carrier lifetime post LID from 105 μs up to 564 μs. PERC solar cells processed with these wafers achieve efficiencies between 19.9% and 20.2%. The light-induced degradation of the efficiency is reduced from 0.47%abs. for the standard 2 ωcm Cz to around 0.3%abs. for 5 ωcm Cz wafers and low oxygen MCz wafers. The lowest efficiency degradation of 0.17%abs. is obtained for the monolike wafers. The experimental results are in good accordance with 2-dimensional simulations using Sentaurus device taking into account the measured injection dependent minority carrier lifetimes.
KW - Charge carrier lifetime
KW - Light-induced degradation
KW - PERC
KW - Silicon solar cells
UR - http://www.scopus.com/inward/record.url?scp=84896462240&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2013.6745110
DO - 10.1109/PVSC.2013.6745110
M3 - Conference contribution
AN - SCOPUS:84896462240
SN - 9781479932993
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 3074
EP - 3078
BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Y2 - 16 June 2013 through 21 June 2013
ER -