Silicon in functional epitaxial oxides: A new group of nanostructures

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • A. Fissel
  • A. Laha
  • E. Bugiel
  • D. Kühne
  • M. Czernohorsky
  • R. Dargis
  • H. J. Osten

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Details

OriginalspracheEnglisch
Seiten (von - bis)512-517
Seitenumfang6
FachzeitschriftMicroelectronics journal
Jahrgang39
Ausgabenummer3-4
Frühes Online-Datum3 Dez. 2007
PublikationsstatusVeröffentlicht - März 2008

Abstract

The ability to integrate low-dimensional crystalline silicon into crystalline insulators with high dielectric constant (high-k) can open the way for a variety of novel applications ranging from high-k replacement in future nonvolatile memory devices to insulator/Si/insulator structures for nanoelectronic applications. We will present an approach for nanostructure fabrication by incorporation of crystalline silicon into epitaxial oxide that is based on a solid-phase epitaxy of Si. In dependence on the preparation conditions we obtained nanostructures containing an either ultra-thin single-crystalline Si quantum-well buried in single-crystalline oxide matrix with sharp interfaces or Si-nanocrystals (ncs) embedded into single-crystalline oxide layer. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si clusters into single-crystalline Gd2O3 on silicon as well as silicon carbide substrates using molecular beam epitaxy. The leakage current of the obtained nanostructures exhibited negative differential resistance at lower temperatures. For structures containing Si-ncs a large hysteresis in capacitance-voltage measurements due to charging and discharging of the Si-ncs was obtained.

ASJC Scopus Sachgebiete

Zitieren

Silicon in functional epitaxial oxides: A new group of nanostructures. / Fissel, A.; Laha, A.; Bugiel, E. et al.
in: Microelectronics journal, Jahrgang 39, Nr. 3-4, 03.2008, S. 512-517.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Fissel, A, Laha, A, Bugiel, E, Kühne, D, Czernohorsky, M, Dargis, R & Osten, HJ 2008, 'Silicon in functional epitaxial oxides: A new group of nanostructures', Microelectronics journal, Jg. 39, Nr. 3-4, S. 512-517. https://doi.org/10.1016/j.mejo.2007.11.007
Fissel, A., Laha, A., Bugiel, E., Kühne, D., Czernohorsky, M., Dargis, R., & Osten, H. J. (2008). Silicon in functional epitaxial oxides: A new group of nanostructures. Microelectronics journal, 39(3-4), 512-517. https://doi.org/10.1016/j.mejo.2007.11.007
Fissel A, Laha A, Bugiel E, Kühne D, Czernohorsky M, Dargis R et al. Silicon in functional epitaxial oxides: A new group of nanostructures. Microelectronics journal. 2008 Mär;39(3-4):512-517. Epub 2007 Dez 3. doi: 10.1016/j.mejo.2007.11.007
Fissel, A. ; Laha, A. ; Bugiel, E. et al. / Silicon in functional epitaxial oxides : A new group of nanostructures. in: Microelectronics journal. 2008 ; Jahrgang 39, Nr. 3-4. S. 512-517.
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abstract = "The ability to integrate low-dimensional crystalline silicon into crystalline insulators with high dielectric constant (high-k) can open the way for a variety of novel applications ranging from high-k replacement in future nonvolatile memory devices to insulator/Si/insulator structures for nanoelectronic applications. We will present an approach for nanostructure fabrication by incorporation of crystalline silicon into epitaxial oxide that is based on a solid-phase epitaxy of Si. In dependence on the preparation conditions we obtained nanostructures containing an either ultra-thin single-crystalline Si quantum-well buried in single-crystalline oxide matrix with sharp interfaces or Si-nanocrystals (ncs) embedded into single-crystalline oxide layer. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si clusters into single-crystalline Gd2O3 on silicon as well as silicon carbide substrates using molecular beam epitaxy. The leakage current of the obtained nanostructures exhibited negative differential resistance at lower temperatures. For structures containing Si-ncs a large hysteresis in capacitance-voltage measurements due to charging and discharging of the Si-ncs was obtained.",
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T2 - A new group of nanostructures

AU - Fissel, A.

AU - Laha, A.

AU - Bugiel, E.

AU - Kühne, D.

AU - Czernohorsky, M.

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AU - Osten, H. J.

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N2 - The ability to integrate low-dimensional crystalline silicon into crystalline insulators with high dielectric constant (high-k) can open the way for a variety of novel applications ranging from high-k replacement in future nonvolatile memory devices to insulator/Si/insulator structures for nanoelectronic applications. We will present an approach for nanostructure fabrication by incorporation of crystalline silicon into epitaxial oxide that is based on a solid-phase epitaxy of Si. In dependence on the preparation conditions we obtained nanostructures containing an either ultra-thin single-crystalline Si quantum-well buried in single-crystalline oxide matrix with sharp interfaces or Si-nanocrystals (ncs) embedded into single-crystalline oxide layer. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si clusters into single-crystalline Gd2O3 on silicon as well as silicon carbide substrates using molecular beam epitaxy. The leakage current of the obtained nanostructures exhibited negative differential resistance at lower temperatures. For structures containing Si-ncs a large hysteresis in capacitance-voltage measurements due to charging and discharging of the Si-ncs was obtained.

AB - The ability to integrate low-dimensional crystalline silicon into crystalline insulators with high dielectric constant (high-k) can open the way for a variety of novel applications ranging from high-k replacement in future nonvolatile memory devices to insulator/Si/insulator structures for nanoelectronic applications. We will present an approach for nanostructure fabrication by incorporation of crystalline silicon into epitaxial oxide that is based on a solid-phase epitaxy of Si. In dependence on the preparation conditions we obtained nanostructures containing an either ultra-thin single-crystalline Si quantum-well buried in single-crystalline oxide matrix with sharp interfaces or Si-nanocrystals (ncs) embedded into single-crystalline oxide layer. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si clusters into single-crystalline Gd2O3 on silicon as well as silicon carbide substrates using molecular beam epitaxy. The leakage current of the obtained nanostructures exhibited negative differential resistance at lower temperatures. For structures containing Si-ncs a large hysteresis in capacitance-voltage measurements due to charging and discharging of the Si-ncs was obtained.

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