Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 638-643 |
| Seitenumfang | 6 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 92 |
| Publikationsstatus | Veröffentlicht - Aug. 2016 |
Abstract
We combine PEDOT:PSS as hole-selective layer on c-Si with a well-passivating electron-selective a-Si:H(n) layer in an alternative type of silicon heterojunction solar cell. As the interface between the PEDOT:PSS and the c-Si substrate plays a crucial role in the cell performance, we examine the impact of an interfacial SiO x tunneling layer between the c-Si substrate and the PEDOT:PSS in detail. We find that a natural SiO x layer grown within a couple of minutes leads to low J 0 values ranging between (80 - 130) fA/cm 2, allowing for V oc values of ∼690 mV. Implementation of this PEDOT:PSS/SiO x/c-Si junctions into solar cells with phosphorus-diffused n + front results in low series resistance values of only 0.6 Ωcm 2 and good fill factors >80% leading to efficiencies >20%. We then implement the PEDOT:PSS/SiO x/c-Si junction to the back of heterojunction cells with an a-Si:H(n)/ITO front, in order to demonstrate the feasibility of this novel cell concept, which has a higher V oc potential compared to cells with a conventionally processed front side. The cell efficiencies of the first batch reach 15.2%. This relatively moderate efficiency of the first cell batch is due to technological issues with the screen-printed front metallization grid, leading to poor fill factors of only 71%, whereas the V oc values of this first batch were already above 650 mV.
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in: Energy Procedia, Jahrgang 92, 08.2016, S. 638-643.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Silicon heterojunction solar cells combining an a-Si:H electron-collector with a PEDOT:PSS hole-collector
AU - Gogolin, Ralf
AU - Zielke, Dimitri
AU - Lövenich, Winfried
AU - Sauer, Rüdiger
AU - Schmidt, Jan
PY - 2016/8
Y1 - 2016/8
N2 - We combine PEDOT:PSS as hole-selective layer on c-Si with a well-passivating electron-selective a-Si:H(n) layer in an alternative type of silicon heterojunction solar cell. As the interface between the PEDOT:PSS and the c-Si substrate plays a crucial role in the cell performance, we examine the impact of an interfacial SiO x tunneling layer between the c-Si substrate and the PEDOT:PSS in detail. We find that a natural SiO x layer grown within a couple of minutes leads to low J 0 values ranging between (80 - 130) fA/cm 2, allowing for V oc values of ∼690 mV. Implementation of this PEDOT:PSS/SiO x/c-Si junctions into solar cells with phosphorus-diffused n + front results in low series resistance values of only 0.6 Ωcm 2 and good fill factors >80% leading to efficiencies >20%. We then implement the PEDOT:PSS/SiO x/c-Si junction to the back of heterojunction cells with an a-Si:H(n)/ITO front, in order to demonstrate the feasibility of this novel cell concept, which has a higher V oc potential compared to cells with a conventionally processed front side. The cell efficiencies of the first batch reach 15.2%. This relatively moderate efficiency of the first cell batch is due to technological issues with the screen-printed front metallization grid, leading to poor fill factors of only 71%, whereas the V oc values of this first batch were already above 650 mV.
AB - We combine PEDOT:PSS as hole-selective layer on c-Si with a well-passivating electron-selective a-Si:H(n) layer in an alternative type of silicon heterojunction solar cell. As the interface between the PEDOT:PSS and the c-Si substrate plays a crucial role in the cell performance, we examine the impact of an interfacial SiO x tunneling layer between the c-Si substrate and the PEDOT:PSS in detail. We find that a natural SiO x layer grown within a couple of minutes leads to low J 0 values ranging between (80 - 130) fA/cm 2, allowing for V oc values of ∼690 mV. Implementation of this PEDOT:PSS/SiO x/c-Si junctions into solar cells with phosphorus-diffused n + front results in low series resistance values of only 0.6 Ωcm 2 and good fill factors >80% leading to efficiencies >20%. We then implement the PEDOT:PSS/SiO x/c-Si junction to the back of heterojunction cells with an a-Si:H(n)/ITO front, in order to demonstrate the feasibility of this novel cell concept, which has a higher V oc potential compared to cells with a conventionally processed front side. The cell efficiencies of the first batch reach 15.2%. This relatively moderate efficiency of the first cell batch is due to technological issues with the screen-printed front metallization grid, leading to poor fill factors of only 71%, whereas the V oc values of this first batch were already above 650 mV.
KW - PEDOT:PSS
KW - heterojunction
KW - interface preparation
KW - organic-silicon junction
UR - http://www.scopus.com/inward/record.url?scp=85014422249&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2016.07.030
DO - 10.1016/j.egypro.2016.07.030
M3 - Article
VL - 92
SP - 638
EP - 643
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
ER -