TY - JOUR

T1 - Silicon Carbide Stacking-Order-Induced Doping Variation in Epitaxial Graphene

AU - Momeni Pakdehi, Davood

AU - Schädlich, Philip

AU - Nguyen, Thi Thuy Nhung

AU - Zakharov, Alexei A.

AU - Wundrack, Stefan

AU - Najafidehaghani, Emad

AU - Speck, Florian

AU - Pierz, Klaus

AU - Seyller, Thomas

AU - Tegenkamp, Christoph

AU - Schumacher, Hans Werner

N1 - Funding information: [ The authors gratefully acknowledge M. Wenderoth and A. Sinterhauf for valuable discussions. This work was supported in part by the Joint Research Project “GIQS” (18SIB07). This project received funding from the European Metrology Programme for Innovation and Research (EMPIR) co?financed by the Participating States and from the European Unions’ Horizon 2020 research and innovation programme. A.A.Z. acknowledges the support from Stiftelsen för Strategisk Forskning (project RMA15?0024). The authors thank DFG Project Te386/12?1 for their support. The authors also acknowledge the funding from the European Commission Graphene Flagship Core2 (grant agreement 785219). The work was co?funded by the Deutsche Forschungsgemeinschaft under Germany's Excellence Strategy – EXC?2123 QuantumFrontiers – 390837967. The authors gratefully acknowledge M. Wenderoth and A. Sinterhauf for valuable discussions. This work was supported in part by the Joint Research Project ?GIQS? (18SIB07). This project received funding from the European Metrology Programme for Innovation and Research (EMPIR) co-financed by the Participating States and from the European Unions? Horizon 2020 research and innovation programme. A.A.Z. acknowledges the support from Stiftelsen f?r Strategisk Forskning (project RMA15-0024).?The authors thank DFG Project Te386/12-1 for their support. The authors also acknowledge the funding from the European Commission Graphene Flagship Core2 (grant agreement 785219). The work was co-funded by the?Deutsche Forschungsgemeinschaft?under Germany's Excellence Strategy ? EXC-2123 QuantumFrontiers ? 390837967. Open access funding enabled and organized by Projekt DEAL

PY - 2020/11/4

Y1 - 2020/11/4

N2 - Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal silicon carbide (SiC)(0001) substrate and overcompensation by donor-like states related to the buffer layer. The presented work is evidence that this effect is also related to the specific underlying SiC terrace. Here a periodic sequence of non-identical SiC terraces is fabricated, which are unambiguously attributed to specific SiC surface terminations. A clear correlation between the SiC termination and the electronic graphene properties is experimentally observed and confirmed by various complementary surface-sensitive methods. This correlation is attributed to a proximity effect of the SiC termination-dependent polarization doping on the overlying graphene layer. These findings open a new approach for a nano-scale doping-engineering by the self-patterning of epitaxial graphene and other 2D layers on dielectric polar substrates.

AB - Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal silicon carbide (SiC)(0001) substrate and overcompensation by donor-like states related to the buffer layer. The presented work is evidence that this effect is also related to the specific underlying SiC terrace. Here a periodic sequence of non-identical SiC terraces is fabricated, which are unambiguously attributed to specific SiC surface terminations. A clear correlation between the SiC termination and the electronic graphene properties is experimentally observed and confirmed by various complementary surface-sensitive methods. This correlation is attributed to a proximity effect of the SiC termination-dependent polarization doping on the overlying graphene layer. These findings open a new approach for a nano-scale doping-engineering by the self-patterning of epitaxial graphene and other 2D layers on dielectric polar substrates.

KW - epitaxial graphenes

KW - hexagonal silicon carbides

KW - SiC spontaneous polarization

KW - surface-dependent polarization doping

UR - http://www.scopus.com/inward/record.url?scp=85090759361&partnerID=8YFLogxK

U2 - 10.1002/adfm.202004695

DO - 10.1002/adfm.202004695

M3 - Article

AN - SCOPUS:85090759361

VL - 30

JO - Advanced functional materials

JF - Advanced functional materials

SN - 1616-301X

IS - 45

M1 - 2004695

ER -