Silicide reaction of Co with Si0.999C0.001

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Autoren

  • S. Teichert
  • M. Falke
  • H. Giesler
  • G. Beddies
  • H. J. Hinneberg
  • G. Lippert
  • J. Griesche
  • H. J. Osten

Externe Organisationen

  • Technische Universität Chemnitz
  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)1051-1054
Seitenumfang4
FachzeitschriftSolid-State Electronics
Jahrgang43
Ausgabenummer6
Frühes Online-Datum9 Juni 1999
PublikationsstatusVeröffentlicht - Juni 1999
Extern publiziertJa
Veranstaltung1998 European Materials Research Society Meeting (E-MRS 1998 Spring Meeting) - Strasbourg, Frankreich
Dauer: 16 Juni 1998 → 19 Juni 1998

Abstract

The disilicide of Co is a promising metallic material for the submicron technology with the advantage of a low specific resistivity as well as of a low preparation temperature. A further downscaling in the Si technology requires in addition to lower process temperatures an effective conservation of dopant distributions. One method for trapping doping profiles is the admixture of a small concentration of carbon to the Si. This paper reports on the Co silicide formation on Si0.999C0.001(001) substrate layers. The Co films were deposited by e-beam evaporation under UHV conditions. To investigate the reaction of the Co films with the substrate layers performed by rapid thermal annealing the samples were characterized by Rutherford backscattering and measuring the electrical resistance at room temperature. Compared with Si(001) a small increase of the thermal budget for the CoSi2 formation on Si0.999C0.001(001) has been found. For samples annealed at 650 °C for 30 s the resistivity in dependence on temperature was determined. The analysis of this data using the Bloch-Grueneisen equation reveals a good electrical quality of the prepared CoSi2 films.

ASJC Scopus Sachgebiete

Zitieren

Silicide reaction of Co with Si0.999C0.001. / Teichert, S.; Falke, M.; Giesler, H. et al.
in: Solid-State Electronics, Jahrgang 43, Nr. 6, 06.1999, S. 1051-1054.

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Teichert, S, Falke, M, Giesler, H, Beddies, G, Hinneberg, HJ, Lippert, G, Griesche, J & Osten, HJ 1999, 'Silicide reaction of Co with Si0.999C0.001', Solid-State Electronics, Jg. 43, Nr. 6, S. 1051-1054. https://doi.org/10.1016/S0038-1101(99)00023-4
Teichert, S., Falke, M., Giesler, H., Beddies, G., Hinneberg, H. J., Lippert, G., Griesche, J., & Osten, H. J. (1999). Silicide reaction of Co with Si0.999C0.001. Solid-State Electronics, 43(6), 1051-1054. https://doi.org/10.1016/S0038-1101(99)00023-4
Teichert S, Falke M, Giesler H, Beddies G, Hinneberg HJ, Lippert G et al. Silicide reaction of Co with Si0.999C0.001. Solid-State Electronics. 1999 Jun;43(6):1051-1054. Epub 1999 Jun 9. doi: 10.1016/S0038-1101(99)00023-4
Teichert, S. ; Falke, M. ; Giesler, H. et al. / Silicide reaction of Co with Si0.999C0.001. in: Solid-State Electronics. 1999 ; Jahrgang 43, Nr. 6. S. 1051-1054.
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T1 - Silicide reaction of Co with Si0.999C0.001

AU - Teichert, S.

AU - Falke, M.

AU - Giesler, H.

AU - Beddies, G.

AU - Hinneberg, H. J.

AU - Lippert, G.

AU - Griesche, J.

AU - Osten, H. J.

PY - 1999/6

Y1 - 1999/6

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AB - The disilicide of Co is a promising metallic material for the submicron technology with the advantage of a low specific resistivity as well as of a low preparation temperature. A further downscaling in the Si technology requires in addition to lower process temperatures an effective conservation of dopant distributions. One method for trapping doping profiles is the admixture of a small concentration of carbon to the Si. This paper reports on the Co silicide formation on Si0.999C0.001(001) substrate layers. The Co films were deposited by e-beam evaporation under UHV conditions. To investigate the reaction of the Co films with the substrate layers performed by rapid thermal annealing the samples were characterized by Rutherford backscattering and measuring the electrical resistance at room temperature. Compared with Si(001) a small increase of the thermal budget for the CoSi2 formation on Si0.999C0.001(001) has been found. For samples annealed at 650 °C for 30 s the resistivity in dependence on temperature was determined. The analysis of this data using the Bloch-Grueneisen equation reveals a good electrical quality of the prepared CoSi2 films.

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