Details
| Originalsprache | Englisch |
|---|---|
| Seiten | 195-200 |
| Seitenumfang | 6 |
| Publikationsstatus | Veröffentlicht - 1996 |
| Extern publiziert | Ja |
| Veranstaltung | 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 - Toulouse, Frankreich Dauer: 29 Apr. 1996 → 3 Mai 1996 |
Konferenz
| Konferenz | 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 |
|---|---|
| Land/Gebiet | Frankreich |
| Ort | Toulouse |
| Zeitraum | 29 Apr. 1996 → 3 Mai 1996 |
Abstract
The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers with more than 1 at.% C can be fabricated. The relation between substitutional and interstitial carbon incorporation will be presented. Substitutionally incorporated C atoms allow strain manipulation, including the growth of strain-free or inversely strained Si1-y-xGexCy layers. The mechanical properties, microscopic structure, thermal stability, as well as the influence of C atoms on band structure will be discussed.
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- Allgemeiner Maschinenbau
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1996. 195-200 Beitrag in 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9, Toulouse, Frankreich.
Publikation: Konferenzbeitrag › Paper › Forschung › Peer-Review
}
TY - CONF
T1 - SiGeC materials
AU - Osten, H. J.
PY - 1996
Y1 - 1996
N2 - The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers with more than 1 at.% C can be fabricated. The relation between substitutional and interstitial carbon incorporation will be presented. Substitutionally incorporated C atoms allow strain manipulation, including the growth of strain-free or inversely strained Si1-y-xGexCy layers. The mechanical properties, microscopic structure, thermal stability, as well as the influence of C atoms on band structure will be discussed.
AB - The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers with more than 1 at.% C can be fabricated. The relation between substitutional and interstitial carbon incorporation will be presented. Substitutionally incorporated C atoms allow strain manipulation, including the growth of strain-free or inversely strained Si1-y-xGexCy layers. The mechanical properties, microscopic structure, thermal stability, as well as the influence of C atoms on band structure will be discussed.
UR - http://www.scopus.com/inward/record.url?scp=0030397006&partnerID=8YFLogxK
M3 - Paper
AN - SCOPUS:0030397006
SP - 195
EP - 200
T2 - 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9
Y2 - 29 April 1996 through 3 May 1996
ER -