Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 770-776 |
| Seitenumfang | 7 |
| Fachzeitschrift | Journal of crystal growth |
| Jahrgang | 227-228 |
| Publikationsstatus | Veröffentlicht - 1 Juli 2001 |
| Veranstaltung | 11th International Conference on Molecular Beam Epitaxy - Bijing, China Dauer: 11 Sept. 2000 → 15 Sept. 2000 |
Abstract
We report on room temperature current voltage characteristics of epitaxially grown Si/SiGe/Si p+/i/n+ tunneling diodes based on Si substrate. The structures are prepared by solid source MBE. Very sharp and high p- and n-type doping into the 1020 cm-3 range is achieved by boron and phosphorous using GaP as source material, respectively. Extremely high peak current densities (PCD) up to 30 kA cm-2 and record peak to valley current ratios (PVCR) of more than 6 are measured at room temperature. These values together with intrinsic peak voltages of about Vp = 0.1 V, valley voltages of Vv = 0.4 V and a voltage swing of Vs = 0.8 V fulfill the requirements for typical digital circuit applications. In the second type of interband tunneling diodes we prepared Si n+/p+/n+ structures. First results indicate a room temperature PVCR up to 2. In the second part we present a new concept for resonant p/i/p intraband tunneling diodes based on self-assembled Ge islands. The structure consists of closely stacked and vertically aligned Ge islands formed by Stranski Krastanov growth. The aligned Ge islands create vertical channels with energetically deep thermalization layers and high Si double barriers for holes in the valeance band. Ge islands provide access to larger band offsets as compared to formerly investigated tunneling structures with planar pseudomorphic SiGe quantum well layers. First measurements of I-V characteristics show two resonances which are attributed to heavy-heavy hole (hh) and heavy-light hole (lh) transitions. The lh resonance shows negative differential resistance up to temperatures above 50 K.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Chemie (insg.)
- Anorganische Chemie
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Journal of crystal growth, Jahrgang 227-228, 01.07.2001, S. 770-776.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Si-based resonant inter- and intraband tunneling diodes
AU - Eberl, K.
AU - Duschl, R.
AU - Schmidt, O. G.
AU - Denker, U.
AU - Haug, R.
N1 - Funding information: The authors would like to thank U. Auer and W. Prost as well as G. Reitemann and E. Kasper for the fruitful collaboration. The work was financially supported by the Bundesministerium für Bildung und Forschung within the project 01M 2953 A0.
PY - 2001/7/1
Y1 - 2001/7/1
N2 - We report on room temperature current voltage characteristics of epitaxially grown Si/SiGe/Si p+/i/n+ tunneling diodes based on Si substrate. The structures are prepared by solid source MBE. Very sharp and high p- and n-type doping into the 1020 cm-3 range is achieved by boron and phosphorous using GaP as source material, respectively. Extremely high peak current densities (PCD) up to 30 kA cm-2 and record peak to valley current ratios (PVCR) of more than 6 are measured at room temperature. These values together with intrinsic peak voltages of about Vp = 0.1 V, valley voltages of Vv = 0.4 V and a voltage swing of Vs = 0.8 V fulfill the requirements for typical digital circuit applications. In the second type of interband tunneling diodes we prepared Si n+/p+/n+ structures. First results indicate a room temperature PVCR up to 2. In the second part we present a new concept for resonant p/i/p intraband tunneling diodes based on self-assembled Ge islands. The structure consists of closely stacked and vertically aligned Ge islands formed by Stranski Krastanov growth. The aligned Ge islands create vertical channels with energetically deep thermalization layers and high Si double barriers for holes in the valeance band. Ge islands provide access to larger band offsets as compared to formerly investigated tunneling structures with planar pseudomorphic SiGe quantum well layers. First measurements of I-V characteristics show two resonances which are attributed to heavy-heavy hole (hh) and heavy-light hole (lh) transitions. The lh resonance shows negative differential resistance up to temperatures above 50 K.
AB - We report on room temperature current voltage characteristics of epitaxially grown Si/SiGe/Si p+/i/n+ tunneling diodes based on Si substrate. The structures are prepared by solid source MBE. Very sharp and high p- and n-type doping into the 1020 cm-3 range is achieved by boron and phosphorous using GaP as source material, respectively. Extremely high peak current densities (PCD) up to 30 kA cm-2 and record peak to valley current ratios (PVCR) of more than 6 are measured at room temperature. These values together with intrinsic peak voltages of about Vp = 0.1 V, valley voltages of Vv = 0.4 V and a voltage swing of Vs = 0.8 V fulfill the requirements for typical digital circuit applications. In the second type of interband tunneling diodes we prepared Si n+/p+/n+ structures. First results indicate a room temperature PVCR up to 2. In the second part we present a new concept for resonant p/i/p intraband tunneling diodes based on self-assembled Ge islands. The structure consists of closely stacked and vertically aligned Ge islands formed by Stranski Krastanov growth. The aligned Ge islands create vertical channels with energetically deep thermalization layers and high Si double barriers for holes in the valeance band. Ge islands provide access to larger band offsets as compared to formerly investigated tunneling structures with planar pseudomorphic SiGe quantum well layers. First measurements of I-V characteristics show two resonances which are attributed to heavy-heavy hole (hh) and heavy-light hole (lh) transitions. The lh resonance shows negative differential resistance up to temperatures above 50 K.
KW - B2. Semiconducting silicon
KW - B3. Esaki-diode
UR - http://www.scopus.com/inward/record.url?scp=0035398938&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(01)00858-2
DO - 10.1016/S0022-0248(01)00858-2
M3 - Conference article
AN - SCOPUS:0035398938
VL - 227-228
SP - 770
EP - 776
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
T2 - 11th International Conference on Molecular Beam Epitaxy
Y2 - 11 September 2000 through 15 September 2000
ER -