Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano Electronic Devices

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

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OriginalspracheEnglisch
Titel des Sammelwerks4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010
Seiten38-42
Seitenumfang5
PublikationsstatusVeröffentlicht - 2010
Veranstaltung4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010 - St. Maarten
Dauer: 10 Feb. 201016 Feb. 2010

Publikationsreihe

Name4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010

Abstract

We describe a novel approach to grow Si nanostructures embedded into crystalline rare earth oxides using molecular beam epitaxy. By efficiently exploiting the growth kinetics during growth one could create nanostructures exhibiting various dimensions, ranging from three dimensionally confined quantum dots to the quantum wells, where the particles are confined in of the dimensions. The crystalline rare earth oxide that has been used in this study is epitaxial gadolinium oxide (Gd2O3). The room temperature quantum confinement effects characterized by the strong intensity and narrow photoluminescence peak in an array of Si quantum dots embedded in Gd 2O3, indicates high crystalline quality and narrow size distribution range of quantum dots. The Si quantum dots with dimension about 3-5nm exhibited quantum confinement, which was observed in the photoluminescence and photoionization studies. The embedded Si-nanoclusters exhibit excellent charge storage capacity with competent retention and endurance characteristics;, and demonstrate their potential in future nonvolatile memory devices.

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Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano Electronic Devices. / Osten, H. J.; Laha, A.; Fissel, A.
4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010. 2010. S. 38-42 5437795 (4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Osten, HJ, Laha, A & Fissel, A 2010, Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano Electronic Devices. in 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010., 5437795, 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010, S. 38-42, 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010, St. Maarten, 10 Feb. 2010. https://doi.org/10.1109/ICQNM.2010.14
Osten, H. J., Laha, A., & Fissel, A. (2010). Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano Electronic Devices. In 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010 (S. 38-42). Artikel 5437795 (4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010). https://doi.org/10.1109/ICQNM.2010.14
Osten HJ, Laha A, Fissel A. Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano Electronic Devices. in 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010. 2010. S. 38-42. 5437795. (4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010). doi: 10.1109/ICQNM.2010.14
Osten, H. J. ; Laha, A. ; Fissel, A. / Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano Electronic Devices. 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010. 2010. S. 38-42 (4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010).
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abstract = "We describe a novel approach to grow Si nanostructures embedded into crystalline rare earth oxides using molecular beam epitaxy. By efficiently exploiting the growth kinetics during growth one could create nanostructures exhibiting various dimensions, ranging from three dimensionally confined quantum dots to the quantum wells, where the particles are confined in of the dimensions. The crystalline rare earth oxide that has been used in this study is epitaxial gadolinium oxide (Gd2O3). The room temperature quantum confinement effects characterized by the strong intensity and narrow photoluminescence peak in an array of Si quantum dots embedded in Gd 2O3, indicates high crystalline quality and narrow size distribution range of quantum dots. The Si quantum dots with dimension about 3-5nm exhibited quantum confinement, which was observed in the photoluminescence and photoionization studies. The embedded Si-nanoclusters exhibit excellent charge storage capacity with competent retention and endurance characteristics;, and demonstrate their potential in future nonvolatile memory devices.",
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TY - GEN

T1 - Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano Electronic Devices

AU - Osten, H. J.

AU - Laha, A.

AU - Fissel, A.

PY - 2010

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N2 - We describe a novel approach to grow Si nanostructures embedded into crystalline rare earth oxides using molecular beam epitaxy. By efficiently exploiting the growth kinetics during growth one could create nanostructures exhibiting various dimensions, ranging from three dimensionally confined quantum dots to the quantum wells, where the particles are confined in of the dimensions. The crystalline rare earth oxide that has been used in this study is epitaxial gadolinium oxide (Gd2O3). The room temperature quantum confinement effects characterized by the strong intensity and narrow photoluminescence peak in an array of Si quantum dots embedded in Gd 2O3, indicates high crystalline quality and narrow size distribution range of quantum dots. The Si quantum dots with dimension about 3-5nm exhibited quantum confinement, which was observed in the photoluminescence and photoionization studies. The embedded Si-nanoclusters exhibit excellent charge storage capacity with competent retention and endurance characteristics;, and demonstrate their potential in future nonvolatile memory devices.

AB - We describe a novel approach to grow Si nanostructures embedded into crystalline rare earth oxides using molecular beam epitaxy. By efficiently exploiting the growth kinetics during growth one could create nanostructures exhibiting various dimensions, ranging from three dimensionally confined quantum dots to the quantum wells, where the particles are confined in of the dimensions. The crystalline rare earth oxide that has been used in this study is epitaxial gadolinium oxide (Gd2O3). The room temperature quantum confinement effects characterized by the strong intensity and narrow photoluminescence peak in an array of Si quantum dots embedded in Gd 2O3, indicates high crystalline quality and narrow size distribution range of quantum dots. The Si quantum dots with dimension about 3-5nm exhibited quantum confinement, which was observed in the photoluminescence and photoionization studies. The embedded Si-nanoclusters exhibit excellent charge storage capacity with competent retention and endurance characteristics;, and demonstrate their potential in future nonvolatile memory devices.

KW - Molecular beam epitaxy

KW - Nonvolatile memory

KW - Optoelectronics

KW - Quantum confinement

KW - Rare earth oxide

KW - Si quantum dot

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T3 - 4th International Conference on Quantum, Nano and Micro Technologies, ICQNM 2010

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